TPCA8104 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPCA8104
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 90 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: SOP-ADVANCE

Búsqueda de reemplazo de MOSFET TPCA8104

TPCA8104 Datasheet (PDF)

..1. Size:231K toshiba
tpca8104.pdf

TPCA8104 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8104 High-Side Switching Applications Unit: mmPortable Equipment Applications 0.40.11.270.50.10.05 M A 8 5 Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 11 m (typ.) 0.150.05 High forward transfer admittance:|Y | = 50 S (ty

7.1. Size:178K toshiba
tpca8102.pdf

TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCA8102 Lithium Ion Battery Applications Unit: mmNotebook PC Applications 0.40.11.270.05 M APortable Equipment Applications 8 50.150.05 Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 4.5m (typ.) 41 0.595 High forward transfer

7.2. Size:133K toshiba
tpca8108.pdf

TPCA8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCA8108 High-Side Switching Applications Motor Drive Applications Unit: mm 0.40.11.270.50.10.05 M A8 5 Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.7 m (typ.) High forward transfer admittance: |Yfs| = 41S (typ.) 0.150.05

7.3. Size:218K toshiba
tpca8106.pdf

TPCA8106 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCA8106 Lithium Ion Battery Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 2.9 m (typ.) 40.595 1 (VGS= -10V

7.4. Size:231K toshiba
tpca8109.pdf

TPCA8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCA8109 Lithium Ion Battery Applications Unit: mmPower Management Switch Applications 1.27 0.4 0.1 8 0.05 M A 5 Small footprint due to small and thin package 0.15 0.05 Low drain-source ON-resistance: RDS (ON) = 7 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -

7.5. Size:248K toshiba
tpca8103.pdf

TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCA8103 Lithium Ion Battery Applications Unit: mmNotebook PC Applications 0.40.11.270.05 M APortable Equipment Applications 8 50.150.05 Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.1 m (typ.) 41 0.595 High forward transfe

7.6. Size:156K toshiba
tpca8107-h.pdf

TPCA8107-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8107-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 CCFL Inverter Applications 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595

7.7. Size:284K toshiba
tpca8105.pdf

TPCA8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCA8105 Notebook PC Applications Unit: mmPortable Equipment Applications 0.40.11.270.50.10.05 M A 8 5 Small footprint due to compact and slim package Low drain-source ON resistance : RDS (ON) = 23 m (typ.) 0.150.05 High forward transfer admittance :|Y | = 14 S (typ.)

7.8. Size:1064K cn vbsemi
tpca8103.pdf

TPCA8103www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.004 at VGS = - 10 V - 120COMPLIANT - 30 130 nC 100 % Rg Tested0.006 at VGS = - 4.5 V - 100APPLICATIONS Notebook- Load SwitchSDFN5X6Top ViewTop View Bottom View18G273645

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