TPCA8120 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCA8120
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 45 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 45 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 190 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 1440 pF
Resistencia entre drenaje y fuente RDS(on): 0.003 Ohm
Paquete / Cubierta: SOP-ADVANCE
Búsqueda de reemplazo de MOSFET TPCA8120
TPCA8120 Datasheet (PDF)
tpca8120.pdf
TPCA8120MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8120TPCA8120TPCA8120TPCA81201. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.4 m (typ.) (V
tpca8124.pdf
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tpca8125.pdf
TPCA8125MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8125TPCA8125TPCA8125TPCA81251. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 19.6 m (typ.) (VGS = -10 V)(3) Low leakage current: IDSS
tpca8123.pdf
TPCA8123MOSFET PMOS (U-MOS)TPCA8123TPCA8123TPCA8123TPCA81231. 1. 1. 1. 2. 2. 2. 2. (1) , (2) : RDS(ON) = 8.5 m () (VGS = -10 V)(3)
tpca8122.pdf
TPCA8122MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8122TPCA8122TPCA8122TPCA81221. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 3.8 m (typ.) (VGS = -10 V)(3) Low leakage current: IDSS
tpca8121.pdf
TPCA8121MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8121TPCA8121TPCA8121TPCA81211. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 2.4 m (typ.) (VGS = -10 V)(3) Low leakage
tpca8128.pdf
TPCA8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8128 Lithium Ion Battery Applications Unit: mmPower Management Switch Applications 1.27 0.4 0.1 8 0.05 M A 5 Small footprint due to compact and slim package Low drain-source ON resistance : RDS (ON) = 3.7 m (typ.) 0.15 0.05 Low leakage current : IDSS = -10 A (max) (
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
