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TPCA8128 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCA8128
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 45 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 34 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 115 nC
   Tiempo de subida (tr): 11 nS
   Conductancia de drenaje-sustrato (Cd): 900 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0048 Ohm
   Paquete / Cubierta: SOP-ADVANCE

 Búsqueda de reemplazo de MOSFET TPCA8128

 

TPCA8128 Datasheet (PDF)

 ..1. Size:240K  toshiba
tpca8128.pdf

TPCA8128
TPCA8128

TPCA8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8128 Lithium Ion Battery Applications Unit: mmPower Management Switch Applications 1.27 0.4 0.1 8 0.05 M A 5 Small footprint due to compact and slim package Low drain-source ON resistance : RDS (ON) = 3.7 m (typ.) 0.15 0.05 Low leakage current : IDSS = -10 A (max) (

 7.1. Size:240K  toshiba
tpca8124.pdf

TPCA8128
TPCA8128

TPCA8124MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8124TPCA8124TPCA8124TPCA81241. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 8.1 m (typ.) (VGS = -10 V)(3) Low leakage current: IDSS

 7.2. Size:240K  toshiba
tpca8125.pdf

TPCA8128
TPCA8128

TPCA8125MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8125TPCA8125TPCA8125TPCA81251. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 19.6 m (typ.) (VGS = -10 V)(3) Low leakage current: IDSS

 7.3. Size:357K  toshiba
tpca8123.pdf

TPCA8128
TPCA8128

TPCA8123MOSFET PMOS (U-MOS)TPCA8123TPCA8123TPCA8123TPCA81231. 1. 1. 1. 2. 2. 2. 2. (1) , (2) : RDS(ON) = 8.5 m () (VGS = -10 V)(3)

 7.4. Size:231K  toshiba
tpca8120.pdf

TPCA8128
TPCA8128

TPCA8120MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8120TPCA8120TPCA8120TPCA81201. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.4 m (typ.) (V

 7.5. Size:238K  toshiba
tpca8122.pdf

TPCA8128
TPCA8128

TPCA8122MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8122TPCA8122TPCA8122TPCA81221. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 3.8 m (typ.) (VGS = -10 V)(3) Low leakage current: IDSS

 7.6. Size:256K  toshiba
tpca8121.pdf

TPCA8128
TPCA8128

TPCA8121MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8121TPCA8121TPCA8121TPCA81211. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 2.4 m (typ.) (VGS = -10 V)(3) Low leakage

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