TPCA8A02-H Todos los transistores

 

TPCA8A02-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCA8A02-H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 34 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.6 nS
   Cossⓘ - Capacitancia de salida: 610 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm
   Paquete / Cubierta: SOP-ADVANCE
 

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TPCA8A02-H Datasheet (PDF)

 ..1. Size:209K  toshiba
 tpca8a02-h.pdf pdf_icon

TPCA8A02-H

TPCA8A02-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A02-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.40.11.270.50.10.05 M A8 5 Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) 0.150.05 Hi

 7.1. Size:214K  toshiba
 tpca8a01-h.pdf pdf_icon

TPCA8A02-H

TPCA8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS ) TPCA8A01-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A58Portable Equipment Applications Built-in schottky barrier diode 0.150.05Low forward voltage: VDSF = -0.6

 7.2. Size:253K  toshiba
 tpca8a09-h.pdf pdf_icon

TPCA8A02-H

TPCA8A09-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A09-HTPCA8A09-HTPCA8A09-HTPCA8A09-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V

 7.3. Size:231K  toshiba
 tpca8a04-h.pdf pdf_icon

TPCA8A02-H

TPCA8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications 1.27 0.4 0.1 0.05 M A 8 5 Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) 0.15 0.05 High-sp

MOSTRAR MÁS

Otros transistores... TPCA8104 , TPCA8105 , TPCA8107-H , TPCA8108 , TPCA8109 , TPCA8120 , TPCA8128 , TPCA8131 , STF13NM60N , TPCA8A04-H , TPCA8A05-H , TPCA8A08-H , TPCA8A09-H , TPCA8A10-H , TPCA8A11-H , TPCC8007 , TPCC8008 .

History: ME120N04T | ME70N03S-G | SM7360EKQG | DH400P06F | IXFT86N30T | IRFS723 | IPB180N08S4-02

 

 
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