TPCA8A04-H Todos los transistores

 

TPCA8A04-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCA8A04-H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 44 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.9 nS
   Cossⓘ - Capacitancia de salida: 990 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: SOP-ADVANCE
     - Selección de transistores por parámetros

 

TPCA8A04-H Datasheet (PDF)

 ..1. Size:231K  toshiba
 tpca8a04-h.pdf pdf_icon

TPCA8A04-H

TPCA8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications 1.27 0.4 0.1 0.05 M A 8 5 Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) 0.15 0.05 High-sp

 7.1. Size:214K  toshiba
 tpca8a01-h.pdf pdf_icon

TPCA8A04-H

TPCA8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS ) TPCA8A01-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A58Portable Equipment Applications Built-in schottky barrier diode 0.150.05Low forward voltage: VDSF = -0.6

 7.2. Size:253K  toshiba
 tpca8a09-h.pdf pdf_icon

TPCA8A04-H

TPCA8A09-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A09-HTPCA8A09-HTPCA8A09-HTPCA8A09-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V

 7.3. Size:223K  toshiba
 tpca8a05-h.pdf pdf_icon

TPCA8A04-H

TPCA8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A05-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.18 0.05 M A Portable Equipment Applications 5 Built-in a schottky barrier diode 0.15 0.05Low forward voltage: V = 0.6 V (max) DSF High

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUK7616-55A | CSD85312Q3E | AP98T03GP-HF | FTK5N80DD

 

 
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