TPCC8061-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPCC8061-H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 2.6 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: TSON-ADVANCE

Búsqueda de reemplazo de MOSFET TPCC8061-H

TPCC8061-H Datasheet (PDF)

..1. Size:258K toshiba
tpcc8061-h.pdf

TPCC8061-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8061-HTPCC8061-HTPCC8061-HTPCC8061-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.5 nC (typ.)(

7.1. Size:227K toshiba
tpcc8065-h.pdf

TPCC8065-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8065-HTPCC8065-HTPCC8065-HTPCC8065-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 4.3 nC (typ.)(

7.2. Size:351K toshiba
tpcc8064-h.pdf

TPCC8064-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8064-HTPCC8064-HTPCC8064-HTPCC8064-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 5.0 nC (typ.)(

7.3. Size:228K toshiba
tpcc8068-h.pdf

TPCC8068-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8068-HTPCC8068-HTPCC8068-HTPCC8068-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.3 nC (typ.)(

7.4. Size:234K toshiba
tpcc8067-h.pdf

TPCC8067-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8067-HTPCC8067-HTPCC8067-HTPCC8067-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 1.9 nC (typ.)(

7.5. Size:415K toshiba
tpcc8062-h.pdf

TPCC8062-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8062-HTPCC8062-HTPCC8062-HTPCC8062-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 7.4 nC (typ.)(

7.6. Size:247K toshiba
tpcc8066-h.pdf

TPCC8066-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8066-HTPCC8066-HTPCC8066-HTPCC8066-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.2 nC (typ.)(

7.7. Size:237K toshiba
tpcc8069.pdf

TPCC8069MOSFETs Silicon N-channel MOS (U-MOS)TPCC8069TPCC8069TPCC8069TPCC80691. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 6.5 m (typ.) (VGS = 10 V)(3) Low l

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