TPCC8073 Todos los transistores

 

TPCC8073 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCC8073
   Código: 8073
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 39 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 27 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 37 nC
   trⓘ - Tiempo de subida: 3.6 nS
   Cossⓘ - Capacitancia de salida: 470 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: TSON-ADVANCE
     - Selección de transistores por parámetros

 

TPCC8073 Datasheet (PDF)

 ..1. Size:233K  toshiba
 tpcc8073.pdf pdf_icon

TPCC8073

TPCC8073MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8073TPCC8073TPCC8073TPCC80731. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) =

 7.1. Size:239K  toshiba
 tpcc8076.pdf pdf_icon

TPCC8073

TPCC8076MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8076TPCC8076TPCC8076TPCC80761. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.7 m

 7.2. Size:234K  toshiba
 tpcc8070.pdf pdf_icon

TPCC8073

TPCC8070MOSFETs Silicon N-channel MOS (U-MOS)TPCC8070TPCC8070TPCC8070TPCC80701. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 10.8 m (typ.) (VGS = 10 V)(3) Low

 7.3. Size:230K  toshiba
 tpcc8074.pdf pdf_icon

TPCC8073

TPCC8074MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8074TPCC8074TPCC8074TPCC80741. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switchings Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON)

MOSTRAR MÁS

Otros transistores... TPCC8009 , TPCC8061-H , TPCC8062-H , TPCC8064-H , TPCC8065-H , TPCC8066-H , TPCC8067-H , TPCC8068-H , SKD502T , TPCC8074 , TPCC8076 , TPCC8084 , TPCC8093 , TPCC8103 , TPCC8104 , TPCC8105 , TPCC8131 .

History: TPCF8B01 | TPCA8030-H

 

 
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