TPCC8103 Todos los transistores

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TPCC8103 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPCC8103

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 27 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 2 V

Corriente continua de drenaje (Id): 18 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.012 Ohm

Empaquetado / Estuche: TSON_Advance

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TPCC8103 Datasheet (PDF)

1.1. tpcc8103 en datasheet 100114.pdf Size:219K _toshiba2

TPCC8103
TPCC8103

TPCC8103 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS?) TPCC8103 Notebook PC Applications Unit: mm Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 9.4 m? (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 ?A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS =

3.1. tpcc8102.pdf Size:223K _toshiba2

TPCC8103
TPCC8103

TPCC8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅤ) TPCC8102 Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 14.5 mΩ (typ.) (VGS = -10 V) • Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 t

3.2. tpcc8104 en datasheet 110607.pdf Size:231K _toshiba2

TPCC8103
TPCC8103

TPCC8104 MOSFETs Silicon P-Channel MOS (U-MOS?) TPCC8104 TPCC8104 TPCC8104 TPCC8104 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 6.8 m? (typ.) (VGS = -10 V)

3.3. tpcc8105 en datasheet 100903.pdf Size:218K _toshiba2

TPCC8103
TPCC8103

TPCC8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS?) TPCC8105 Lithium Ion Battery Applications Unit: mm Power Management Switch Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 6.0 m? (typ.)( VGS = -10 V) Low leakage current: IDSS = -10 ?A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2

Otros transistores... TPCC8066-H , TPCC8067-H , TPCC8068-H , TPCC8073 , TPCC8074 , TPCC8076 , TPCC8084 , TPCC8093 , BUK455-200A , TPCC8104 , TPCC8105 , TPCC8131 , TPCC8A01-H , TPCF8002 , TPCF8003 , TPCF8004 , TPCF8101 .

 


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Introduzca al menos 1 números o letras