TPCC8103 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCC8103
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 27 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.3 nS
Cossⓘ - Capacitancia de salida: 490 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: TSON-ADVANCE
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TPCC8103 Datasheet (PDF)
tpcc8103.pdf

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tpcc8107.pdf

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tpcc8106.pdf

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tpcc8104.pdf

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Otros transistores... TPCC8066-H , TPCC8067-H , TPCC8068-H , TPCC8073 , TPCC8074 , TPCC8076 , TPCC8084 , TPCC8093 , MMIS60R580P , TPCC8104 , TPCC8105 , TPCC8131 , TPCC8A01-H , TPCF8002 , TPCF8003 , TPCF8004 , TPCF8101 .
History: MMBFJ110 | DMN5L06W-7 | SVD50N06MJ | APT60N60BCSG | SVF12N60S | AP55T10GS-HF
History: MMBFJ110 | DMN5L06W-7 | SVD50N06MJ | APT60N60BCSG | SVF12N60S | AP55T10GS-HF



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