TPCC8105 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCC8105
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 580 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0078 Ohm
Encapsulados: TSON-ADVANCE
Búsqueda de reemplazo de TPCC8105 MOSFET
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TPCC8105 datasheet
tpcc8105.pdf
TPCC8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCC8105 Lithium Ion Battery Applications Unit mm Power Management Switch Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 6.0 m (typ.)( VGS = -10 V) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode V
tpcc8107.pdf
TPCC8107 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8107 TPCC8107 TPCC8107 TPCC8107 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 23.5 m (typ.) (VGS = -10 V) (3) Low
tpcc8106.pdf
TPCC8106 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8106 TPCC8106 TPCC8106 TPCC8106 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 9.5 m (typ.) (VGS = -10 V) (3) Low
tpcc8104.pdf
TPCC8104 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8104 TPCC8104 TPCC8104 TPCC8104 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 6.8 m (typ.) (V
Otros transistores... TPCC8068-H, TPCC8073, TPCC8074, TPCC8076, TPCC8084, TPCC8093, TPCC8103, TPCC8104, IRFZ46N, TPCC8131, TPCC8A01-H, TPCF8002, TPCF8003, TPCF8004, TPCF8101, TPCF8105, TPCF8107
History: PE6A4BA | SLP80R240SJ
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