TPCF8003 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPCF8003
   Código: F2C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 9.5 nC
   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 215 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: VS8

Búsqueda de reemplazo de MOSFET TPCF8003

TPCF8003 Datasheet (PDF)

..1. Size:232K toshiba
tpcf8003.pdf

TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCF8003 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) =14 m (typ.) VGS= 4.5V Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2

7.1. Size:229K toshiba
tpcf8004.pdf

TPCF8004MOSFETs Silicon N-Channel MOS (U-MOS)TPCF8004TPCF8004TPCF8004TPCF80041. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 19 m (typ.) (VGS = 10 V)(3) Low leakage curr

7.2. Size:229K toshiba
tpcf8002.pdf

TPCF8002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCF8002 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON resistance: RDS (ON) = 16 m (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V

7.3. Size:252K toshiba
tpcf8001.pdf

TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8001 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 8 S (typ.) Low leakage current: IDSS = 10 A (max.) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (V

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