TPCF8003 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPCF8003

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.2 nS

Cossⓘ - Capacitancia de salida: 215 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: VS8

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TPCF8003 datasheet

 ..1. Size:232K  toshiba
 tpcf8003.pdf pdf_icon

TPCF8003

TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCF8003 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) =14 m (typ.) VGS= 4.5V Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement mode Vth = 0.5 to 1.2

 7.1. Size:229K  toshiba
 tpcf8004.pdf pdf_icon

TPCF8003

TPCF8004 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCF8004 TPCF8004 TPCF8004 TPCF8004 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 19 m (typ.) (VGS = 10 V) (3) Low leakage curr

 7.2. Size:229K  toshiba
 tpcf8002.pdf pdf_icon

TPCF8003

TPCF8002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCF8002 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON resistance RDS (ON) = 16 m (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (VDS = 10 V

 7.3. Size:252K  toshiba
 tpcf8001.pdf pdf_icon

TPCF8003

TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8001 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 19 m (typ.) High forward transfer admittance Yfs = 8 S (typ.) Low leakage current IDSS = 10 A (max.) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (V

MOSTRAR MÁS

Otros transistores... TPCC8084, TPCC8093, TPCC8103, TPCC8104, TPCC8105, TPCC8131, TPCC8A01-H, TPCF8002, IRFB7545, TPCF8004, TPCF8101, TPCF8105, TPCF8107, TPCF8108, TPCF8201, TPCF8301, TPCF8304