TPCF8107 Todos los transistores

 ..1. Size:228K  toshiba
 tpcf8107.pdf

TPCF8107 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8107 TPCF8107 TPCF8107 TPCF8107 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) =

 7.1. Size:264K  toshiba
 tpcf8104.pdf

TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCF8104 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 21 m (typ.) High forward transfer admittance Yfs = 9.6 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V

 7.2. Size:219K  toshiba
 tpcf8108.pdf

TPCF8108 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8108 TPCF8108 TPCF8108 TPCF8108 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) =

 7.3. Size:223K  toshiba
 tpcf8105.pdf

TPCF8105 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8105 TPCF8105 TPCF8105 TPCF8105 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 24 m (typ.) (VG

 7.4. Size:224K  toshiba
 tpcf8102.pdf

TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 24 m (typ.) High forward transfer admittance Yfs = 14 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -20 V) Enhancement mode Vth = -0.5 to -1.2 V

 7.5. Size:252K  toshiba
 tpcf8101.pdf

TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 22 m (typ.) High forward transfer admittance Yfs = 14 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -12 V) Enhancement model Vth = -0.5 to -1.2 V

 7.6. Size:295K  toshiba
 tpcf8103.pdf

TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8103 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 72 m (typ.) High forward transfer admittance Yfs = 4.7S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -20 V) Enhancement-model Vth = -0.5 to -1.2 V