TPCF8304 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPCF8304

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.3 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm

Encapsulados: VS8

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TPCF8304 datasheet

 ..1. Size:283K  toshiba
 tpcf8304.pdf pdf_icon

TPCF8304

TPCF8304 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV) TPCF8304 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 60 m (typ.) High forward transfer admittance Yfs = 5.9 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement model Vth = -0.8 to -2.0 V,

 7.1. Size:238K  toshiba
 tpcf8305.pdf pdf_icon

TPCF8304

TPCF8305 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8305 TPCF8305 TPCF8305 TPCF8305 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 47 m (typ.) (VGS = -4.5 V) (3) Low leakage

 7.2. Size:225K  toshiba
 tpcf8306.pdf pdf_icon

TPCF8304

TPCF8306 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8306 TPCF8306 TPCF8306 TPCF8306 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 90 m (typ.) (VGS = -4.5 V) (3) Low leakage current

 7.3. Size:180K  toshiba
 tpcf8301.pdf pdf_icon

TPCF8304

TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8301 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 72 m (typ.) High forward transfer admittance Y = 4.7 S (typ.) fs Low leakage current I = -10 A (max) (V = -20 V) DSS DS Enhancement-model Vth = -0.5 to

MOSTRAR MÁS

Otros transistores... TPCF8003, TPCF8004, TPCF8101, TPCF8105, TPCF8107, TPCF8108, TPCF8201, TPCF8301, 60N06, TPCF8305, TPCF8402, TPCF8B01, TPCP8003-H, TPCP8004, TPCP8005-H, TPCP8006, TPCP8007-H