TPCP8405 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TPCP8405MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPCP8405TPCP8405TPCP8405TPCP84051. Applications1. Applications1. Applications1. Applications Cell Phones Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistanceP-channel RDS(ON) = 24 m (typ.) (VGS = -10 V), N-channel RDS(ON) = 20 m (typ.) (VGS = 10 V)

TPCP8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO/U-MOS) TPCP8404 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05 Low drain-source ON-resistance : P Channel RDS (ON) = 38 m(typ.) 0.05 M A8 5(VGS=-10V) N Channel RDS (ON) = 38 m(typ.) VGS=10V) High forward transfer admittance : P Channel |Yfs

TPCP8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8403 Portable Equipment Applications Motor Drive Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A 8 5 Lead(Pb)-Free Low drain-source ON resistance : P Channel RDS (ON) = 55 m (typ.) N Channel RDS (ON) = 31 m (typ.) High forward trans

TPCP8407MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS )TPCP8407TPCP8407TPCP8407TPCP84071. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low gate chargeN-channel MOSFET: QSW = 4.7 nC (typ.)P-channel MOSFET: QSW = 5.5 nC (typ.)(3) Lo

TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS / -MOS ) TPCP8401 Switching Regulator Applications Load Switch Applications Unit: mm0.330.05 Lead(Pb)-Free 0.05 M A 8 5 Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel MOS FET for drive Small footprint due to small and thin pack

TPCP8406MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPCP8406TPCP8406TPCP8406TPCP84061. Applications1. Applications1. Applications1. Applications Cell Phones Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistanceP-channel RDS(ON) = 33 m (typ.) (VGS = -10 V), N-channel RDS(ON) = 24 m (typ.) (VGS = 10 V)

TPCP8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8402 Portable Equipment Applications Mortor Drive Applications Unit: mm DC-DC Converter Applications Low drain-source ON resistance : P Channel R = 60 m (typ.) DS (ON) N Channel R = 38 m (typ.) DS (ON) High forward transfer admittance : P Channel |Y | = 6.0

SMD Type MOSFETTransistorsSilicon P,N Channel MOSFETTPCP84040.330.05 Features 2-3V1G0.05 M A8 5 Low drain-source ON-resistance:P Channel RDS(ON) = 38m (typ.)(VGS=-10V)N Channel RDS(ON) = 38m (typ.)(VGS=10V) High forward transfer admittance:0.475 1 4B0.05 M B0.65P Channel |Yfs| = 7.3S (typ.)2.90.1AN Channel |Yfs| = 8S (typ.)0.80.05 Low leakage curr