2SJ315 Todos los transistores

 

2SJ315 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ315

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 20 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 5 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.25 Ohm

Empaquetado / Estuche: SC64

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2SJ315 Datasheet (PDF)

1.1. 2sj315.pdf Size:147K _toshiba

2SJ315
2SJ315

2SJ315 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSIV) 2SJ315 DC-DC Converter Unit: mm FEATURES 4- Volt gate drive Low drain-source ON resistance : R = 0.25 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 3.0 S (typ.) fs Low leakage current : IDSS = -100 µA (max) (V = -60 V) DS Enhancement-mode : V = -0.8~-2.0 V (V = -10 V

5.1. 2sj314-01l-s.pdf Size:146K _upd

2SJ315
2SJ315

FUJI POWER MOSFET 2SJ314-01L,S P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features K-Pack(L) K-Pack(S) High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier L-type EIAJ Maximum ratings and characterist

5.2. 2sj313.pdf Size:238K _toshiba

2SJ315
2SJ315

2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -180 V High forward transfer admittance : |Y | = 0.7 S (typ.) fs Complementary to 2SK2013 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS

 5.3. 2sj312.pdf Size:362K _toshiba

2SJ315
2SJ315

2SJ312 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSIV) 2SJ312 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 80 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : IDSS = -100 µA (max) (V = -60 V) DS Enhancement-mode

5.4. 2sj316.pdf Size:91K _sanyo

2SJ315
2SJ315

Ordering number:EN4309 P-Channel Silicon MOSFET 2SJ316 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ316] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 1 : Gate 3.0 2 : Drain 0.75 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Pa

 5.5. 2sj319.pdf Size:87K _renesas

2SJ315
2SJ315

2SJ319(L), 2SJ319(S) Silicon P Channel MOS FET REJ03G0858-0200 (Previous: ADE-208-1192) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package code: PRSS000

5.6. 2sj317.pdf Size:74K _renesas

2SJ315
2SJ315

2SJ317 Silicon P Channel MOS FET REJ03G0857-0200 (Previous: ADE-208-1191) Rev.2.00 Sep 07, 2005 Description High speed power switching Low voltage operation Features Very low on-resistance High speed switching Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline RENESAS Package code: PLZZ0004CA-A R (Package name: UPAK )

5.7. r07ds0396ej 2sj319ls.pdf Size:103K _renesas

2SJ315
2SJ315

Preliminary Datasheet R07DS0396EJ0300 2SJ319(L), 2SJ319(S) (Previous: REJ03G0858-0200) Rev.3.00 Silicon P Channel MOS FET May 16, 2011 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RENES

5.8. 2sj319s.pdf Size:1212K _kexin

2SJ315
2SJ315

SMD Type MOSFET P-Channel MOSFET 2SJ319S TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features 4 ● VDS (V) =-200V ● ID =-3 A (VGS =-10V) 0.127 D +0.1 0.80-0.1 max ● RDS(ON) < 2.3Ω (VGS =-10V) G ● High speed switching ● Low drive current + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4.60 -0.15 2 Drain 3 Source S 4 Drain ■

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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