2SJ412 Todos los transistores

 

2SJ412 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ412

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 60 W

Tensión drenaje-fuente (Vds): 100 V

Corriente continua de drenaje (Id): 16 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 48 nC

Resistencia drenaje-fuente RDS(on): 0.21 Ohm

Empaquetado / Estuche: TO220FL, SM

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2SJ412 Datasheet (PDF)

1.1. 2sj412.pdf Size:189K _toshiba

2SJ412
2SJ412

2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.) • Low leakage current: IDSS = -100 μA (max) (VDS = -100 V) • Enhancement mode:

5.1. 2sj416.pdf Size:411K _sanyo

2SJ412
2SJ412

注文コード No. N 5 2 6 6 2SJ416 No. 526 6 52599 新 P チャネル MOS 形シリコン電界効果トランジスタ 2SJ416 超高速スイッチング用 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃ unit ドレイン・ソース電圧 VDSS -30 V ゲート・ソース電圧 VGSS ±20 V

5.2. 2sj419.pdf Size:100K _sanyo

2SJ412
2SJ412

Ordering number:EN5313A P-Channel Silicon MOSFET 2SJ419 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-resistance. unit:mm · Ultrahigh-speed switching. 2116 · 2.5V drive. [2SJ419] 8 5 1 : Source 2 : Source 3 : Source 14 0.2 4 : Gate 5.0 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.595 1.27 0.43 SANYO : SOP8 Specifications Absolute Maxim

 5.3. 2sj417.pdf Size:131K _sanyo

2SJ412
2SJ412

Ordering number:EN5267 P-Channel Silicon MOSFET 2SJ417 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-resistance. unit:mm · Ultrahigh-speed switching. 2083B · 4V drive. [2SJ417] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ417] 6.5 2.3 5.0 0.5 4 0.5

5.4. 2sj413.pdf Size:79K _sanyo

2SJ412
2SJ412

Ordering number:ENN5366A P-Channel Silicon MOSFET 2SJ413 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2076B · Low-voltage drive. [2SJ413] · Micaless package facilitating mounting. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 2 3 1 : Gate 2 : Drain 3 : Source 5.45 5.45 SANYO : TO-3PML Speci

 5.5. 2sj418.pdf Size:127K _sanyo

2SJ412
2SJ412

Ordering number:ENN5298A P-Channel Silicon MOSFET 2SJ418 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2083B · 4V drive. [2SJ418] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ418] 6.5 2.3 5.0 0.5 4 0.5

5.6. 2sj410.pdf Size:1111K _renesas

2SJ412
2SJ412

2SJ410 Silicon P Channel MOS FET REJ03G0863-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter and motor driver Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D 1. Gate G

5.7. 2sj411.pdf Size:69K _nec

2SJ412
2SJ412

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ411 P-CHANNEL SIGNAL MOS FET FOR SWITCHING The 2SJ411 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS (in mm) 7.0 MAX. 1.2 a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for power control switche

Otros transistores... 2SJ338 , 2SJ349 , 2SJ377 , 2SJ378 , 2SJ380 , 2SJ401 , 2SJ402 , 2SJ407 , IRFP4332 , 2SJ438 , 2SJ439 , 2SJ440 , 2SJ464 , 2SJ507 , 2SJ508 , 2SJ509 , 2SJ512 .

 

 
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