2SJ464 Todos los transistores

 

2SJ464 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ464

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 45 W

Tensión drenaje-fuente (Vds): 100 V

Corriente continua de drenaje (Id): 18 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.09 Ohm

Empaquetado / Estuche: TO220NIS

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2SJ464 Datasheet (PDF)

1.1. 2sj464.pdf Size:319K _toshiba

2SJ464
2SJ464



5.1. 2sj465.pdf Size:371K _toshiba

2SJ464
2SJ464

2SJ465 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -π-MOSV) 2SJ465 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 2.5 V gate drive Low drain-source ON resistance : R = 0.54 Ω (typ.) DS (ON) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : I = -100 µA (max) DSS (V = -16 V) DS Enhance

5.2. 2sj466.pdf Size:39K _sanyo

2SJ464
2SJ464

Ordering number:ENN5491B P-Channel Silicon MOSFET 2SJ466 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2128 · 4V drive. [2SJ466] · Enables simplified fabrication, high-density mount- 8.2 7.8 ing, and miniaturization in end products due to the 6.2 0.6 3 surface mountable package. 1 2 0.3 1

 5.3. 2sj463a.pdf Size:246K _renesas

2SJ464
2SJ464

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.4. 2sj463a.pdf Size:138K _nec

2SJ464
2SJ464

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ463A is a switching device which can be driven directly 2.1 ±0.1 by a 2.5 V power source. 1.25 ±0.1 The 2SJ463A has excellent switching characteristics, and is suitable for use as a high-speed switching device in digita

 5.5. 2sj461.pdf Size:711K _nec

2SJ464
2SJ464

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ461 is a switching device which can be driven directly 2.8 ±0.2 by a 2.5 V power source. +0.1 0.65 –0.15 1.5 The 2SJ461 has excellent switching characteristics and is suitable for use as a high-speed switching device

5.6. 2sj460.pdf Size:294K _nec

2SJ464
2SJ464



5.7. 2sj461a.pdf Size:723K _nec

2SJ464
2SJ464

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461A P-CHANNEL MOSFET FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461A has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. FEATURES PACKAGE DRAWING (Unit: mm) • Can be driven by a

5.8. 2sj462.pdf Size:62K _nec

2SJ464
2SJ464

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings (unit : mm) The 2SJ462 is a switching device which can be driven directly 5.7 ±0.1 by an IC operating at 3 V. 1.5 ±0.1 2.0 ±0.2 The 2SJ462 features a low on-state resistance and can be driven by a low voltage power source, so it is suitable for

5.9. 2sj461-3.pdf Size:1139K _kexin

2SJ464
2SJ464

SMD Type MOSFET P-Channel MOSFET 2SJ461 SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) =-50V 1 2 ● ID =-0.1 A +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 ● RDS(ON) < 50Ω (VGS =-4V) 1.9 -0.2 ● RDS(ON) < 100Ω (VGS =-2.5V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltag

5.10. 2sj461.pdf Size:1130K _kexin

2SJ464
2SJ464

SMD Type MOSFET P-Channel MOSFET 2SJ461 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-50V 1 2 ● ID =-0.1 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 ● RDS(ON) < 50Ω (VGS =-4V) 1.9+0.1 -0.1 ● RDS(ON) < 100Ω (VGS =-2.5V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS

Otros transistores... 2SJ380 , 2SJ401 , 2SJ402 , 2SJ407 , 2SJ412 , 2SJ438 , 2SJ439 , 2SJ440 , CEP83A3 , 2SJ507 , 2SJ508 , 2SJ509 , 2SJ512 , 2SJ516 , 2SJ525 , 2SJ618 , 2SJ619 .

 

 
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