2SJ516 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SJ516
   Código: J516
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 29 nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO220NIS

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2SJ516 Datasheet (PDF)

..1. Size:411K toshiba
2sj516.pdf

2SJ516 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV) 2SJ516 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.6 (typ.) High forward transfer admittance : |Y | = 5.3 S (typ.) fs Low leakage current : I = -100 A (max) (V = -250 V) DSS DS Enhancement-mode : Vth = -1.5~-3.

9.1. Size:416K toshiba
2sj511.pdf

2SJ511 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ511 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.32 (typ.) DS (ON) High forward transfer admittance : |Y | = 1.4 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -30 V) DS Enhancem

9.2. Size:454K toshiba
2sj512.pdf

2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ512 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 1.0 (typ.) High forward transfer admittance : |Y | = 3.7 S (typ.) fs Low leakage current : I = -100 A (max) (V = -250 V) DSS DS Enhancement-mode : Vth = -1.5~

9.3. Size:83K renesas
2sj518.pdf

2SJ518 Silicon P Channel MOS FET REJ03G0875-0400 (Previous: ADE-208-580B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.35 typ. (at VGS = 10 V, ID = 1 A) Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PLZZ0004CA-AR(Package name: UPAK )

9.4. Size:92K renesas
rej03g0874 2sj517ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.5. Size:96K renesas
rej03g0875 2sj518ds.pdf

9.6. Size:820K cn vbsemi
2sj518.pdf

2SJ518www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.058 at VGS = - 10 V - 6.5APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 5.5 Load SwitchSDGDG D SP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Lim

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