2SK2313 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2313
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 2600 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de 2SK2313 MOSFET
2SK2313 Datasheet (PDF)
2sk2313.pdf

2SK2313 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2313 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 8 m (typ.) High forward transfer admittance : |Yfs| = 60 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode :
2sk2313.pdf

isc N-Channel MOSFET Transistor 2SK2313DESCRIPTIONDrain Current ID=60A@ TC=25Drain Source Voltage-: VDSS=60V(Min)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,Chopper regulator,DC-DC converter and motor driv
2sk2314.pdf

2SK2314 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2314 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 66 m (typ.) High forward transfer admittance : |Yfs| = 16 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 100 V) Enhancement mode
2sk2311.pdf

2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2311 Chopper Regulator, DC-DC Converter and Switching Unit: mm Regulator Applications 4 V gate drive Low drain-source ON resistance : R = 36 m (typ.) DS (ON) High forward transfer admittance : |Y | = 16 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS En
Otros transistores... 2SK2229 , 2SK2231 , 2SK2232 , 2SK2233 , 2SK2266 , 2SK2267 , 2SK2311 , 2SK2312 , IRF520 , 2SK2314 , 2SK2350 , 2SK2376 , 2SK2381 , 2SK2382 , 2SK2385 , 2SK2391 , 2SK2398 .
History: DH026N06F | APT19M120J | P0660EI | AF10N65S | 2SK701 | AP05N50EH-HF | ELM33401CA-S
History: DH026N06F | APT19M120J | P0660EI | AF10N65S | 2SK701 | AP05N50EH-HF | ELM33401CA-S



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