2SK2350 Todos los transistores

 ..1. Size:417K  toshiba
 2sk2350.pdf

2SK2350 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2350 Switching Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.26 (typ.) DS (ON) High forward transfer admittance Y = 8 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 200 V) DS Enhance

 ..2. Size:214K  inchange semiconductor
 2sk2350.pdf

isc N-Channel MOSFET Transistor 2SK2350 DESCRIPTION Drain Current I = 8.5A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V

 8.1. Size:499K  toshiba
 2sk2352.pdf

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 8.2. Size:90K  nec
 2sk2359 2sk2360.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2359/2SK2360 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel (in millimeters) MOS Field Effect Transistor designed for high voltage switching applications. 10.6 MAX. 4.8 MAX. 3.6 0.2 1.3 0.2 10.0 FEATURES Low On-Resistance 4 2SK2359 RDS(o

 8.3. Size:55K  nec
 2sk2357 2sk2358.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2357/2SK2358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor (in millimeters) designed for high voltage switching applications. 4.5 0.2 10.0 0.3 3.2 0.2 FEATURES 2.7 0.2 Low On-Resistance 2SK2357 RDS(on) = 0.9 (VGS = 10 V, ID =

 8.4. Size:214K  inchange semiconductor
 2sk2352.pdf

isc N-Channel MOSFET Transistor 2SK2352 DESCRIPTION Drain Current I = 6A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr

 8.5. Size:58K  inchange semiconductor
 2sk2351.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2351 DESCRIPTION Drain Current ID= 6A@ TC=25 Drain Source Voltage- VDSS= 600V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage 30 V