2SK2376 Todos los transistores

2SK2376 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2- -MOSV) 2SK2376 Unit mm Chopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 13 m (typ.) High forward transfer admittance Yfs = 40 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement mode Vt

Ordering number ENN5412B 2SK2378 N-channel Silicon MOSFET 2SK2378 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2378] Micaless package facilitaing mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source Speci

Ordering number ENN5374A 2SK2379 N-Channel Silicon MOSFET 2SK2379 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2379] 4.5 Micalless package facilitaing mounting. 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 Gate 1 2 3 2 Drain 2.55 2.55 3 Source Spe

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK2370 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis- (in millimeters) tor designed for high voltage switching applications. 3.0 0.2 FEATURES 4.7 MAX. 15.7 MAX 1.5 Low On-Resistance 2SK2369 RDS(on) = 0.35 (VGS = 10 V, ID = 1

Power F-MOS FETs 2SK2377 2SK2377 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Avalanche energy capability guaranteed 5.5 0.2 2.7 0.2 High-speed switching Low ON-resistance 3.1 0.1 No secondary breakdown Low-voltage drive Applications 1.3 0.2 1.4 0.1 Non-contact relay Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive Control equipmen

Power F-MOS FETs 2SK2374 2SK2374 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 3.2 0.1 High-speed switching 5 5 Low ON-resistance No secondary breakdown 5 5 4.0 Applications 5 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5 Control equipmen

Power F-MOS FETs 2SK2375 2SK2375 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 3.2 0.1 High-speed switching 5 5 Low ON-resistance No secondary breakdown 5 5 4.0 Applications 5 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5 Control equipmen