2SK2401 Todos los transistores

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2SK2401 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2401

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75 W

Tensión drenaje-fuente (Vds): 200 V

Corriente continua de drenaje (Id): 15 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.18 Ohm

Empaquetado / Estuche: TO220FL_SM

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2SK2401 Datasheet (PDF)

1.1. 2sk2401.pdf Size:315K _toshiba

2SK2401
2SK2401

2SK2401 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2401 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.13 ? (typ.) High forward transfer admittance : |Yfs| = 17 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 200 V) Enhancement-mode : Vth = 1.5~3.5 V (VDS = 10

4.1. 2sk2402.pdf Size:58K _update

2SK2401
2SK2401

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2402 DESCRIPTION ·Drain Current ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V

4.2. 2sk2407.pdf Size:55K _update

2SK2401
2SK2401

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2407 DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±30 V

 4.3. 2sk2400.pdf Size:402K _toshiba

2SK2401
2SK2401

2SK2400 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2400 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 17 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : IDSS = 100 µA (max) (V = 100 V) DS Enhancement-

4.4. 2sk2406.pdf Size:99K _sanyo

2SK2401
2SK2401

Ordering number:ENN5251 N-Channel Silicon MOSFET 2SK2406 Ultrahigh-Speed Switching, Motor Driver Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2083B High-speed diode. [2SK2406] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SK2406] 6.5 2.

 4.5. rej03g1011 2sk2408ds.pdf Size:96K _renesas

2SK2401
2SK2401

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.6. 2sk2408.pdf Size:82K _renesas

2SK2401
2SK2401

2SK2408 Silicon N Channel MOS FET REJ03G1011-0300 (Previous: ADE-208-1358) Rev.3.00 Apr 27, 2006 Application High speed power switching Features Low on-resistance Built-in fast recovery diode (trr = 120 ns typ) High speed switching Low drive current Suitable for switching regulator, motor control Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-

4.7. 3sk73 3sk77 2sk240 2sj75 2sk146 2sj73 2sk389 2sj109 2sk266 2sk455 2sk456 2sc3381 2sa1349.pdf Size:150K _no

2SK2401
2SK2401

Otros transistores... 2SK2376 , 2SK2381 , 2SK2382 , 2SK2385 , 2SK2391 , 2SK2398 , 2SK2399 , 2SK2400 , 2SK3878 , 2SK2417 , 2SK2466 , 2SK2467 , 2SK2493 , 2SK2507 , 2SK2508 , 2SK2542 , 2SK2543 .

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