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2SK2493 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2493

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 20 W

Tensión drenaje-fuente (Vds): 16 V

Corriente continua de drenaje (Id): 5 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: SC64

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2SK2493 Datasheet (PDF)

1.1. 2sk2493.pdf Size:383K _toshiba

2SK2493
2SK2493

2SK2493 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2493 Chopper Regulator and DC-DC Converter Applications Unit: mm 2.5 V gate drive Low drain-source ON resistance : R = 0.08 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : IDSS = 100 µA (max) (V = 16 V) DS Enhancement-mode : V = 0.5~1.

4.1. 2sk2499-z.pdf Size:211K _update

2SK2493
2SK2493

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sk2495.pdf Size:33K _panasonic

2SK2493
2SK2493

Power F-MOS FETs 2SK2495 2SK2495 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 3.4 0.3 8.5 0.2 6.0 0.5 1.0 0.1 High-speed switching No secondary breakdown Applications 1.5max. 1.1max. High-speed switching (switching mode regulator) For high-frequency power amplification 0.8 0.1 0.5max. 2.54 0.3 5.08 0.5 Absolute Maximum Ratings

Otros transistores... 2SK2391 , 2SK2398 , 2SK2399 , 2SK2400 , 2SK2401 , 2SK2417 , 2SK2466 , 2SK2467 , IRF8010 , 2SK2507 , 2SK2508 , 2SK2542 , 2SK2543 , 2SK2544 , 2SK2545 , 2SK2549 , 2SK2598 .

 

 
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