2SK2598 Todos los transistores

 

2SK2598 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2598

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 60 W

Tensión drenaje-fuente (Vds): 250 V

Corriente continua de drenaje (Id): 13 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.25 Ohm

Empaquetado / Estuche: TO220FL_SM

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2SK2598 Datasheet (PDF)

1.1. 2sk2598.pdf Size:418K _toshiba

2SK2598
2SK2598

2SK2598 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2598 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.18 ? (typ.) High forward transfer admittance : |Y | = 13 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 250 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V

4.1. 2sk259.pdf Size:52K _update

2SK2598
2SK2598

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK259 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 350

4.2. 2sk259h 2sk260h.pdf Size:160K _update

2SK2598
2SK2598



 4.3. 2sk2592.pdf Size:43K _update-mosfet

2SK2598
2SK2598

Ordering number : EN5450 2SK2592 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK2592 Applications Features • Low ON-resistance. • High-speed diode. • Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package. Specifications Absolute Maximum Ratings at Ta=25 C P

4.4. 2sk2599.pdf Size:417K _toshiba

2SK2598
2SK2598

2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2599 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 2.9 ? (typ.) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =

 4.5. 2sk2596.pdf Size:146K _renesas

2SK2598
2SK2598

2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ?D = 45%min. (f = 836.5 MHz) Compact package capable of surface mounting Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 3 1 2 1. Gate 3 2. Source 1 3. Drain 4. Source

4.6. 2sk2595.pdf Size:134K _renesas

2SK2598
2SK2598

2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0401 Rev.4.01 Jan 30, 2006 Features High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ?D = 50% min. (f = 836.5 MHz) Compact package capable of surface mounting Outline RENESAS Package code : PLSS0003ZA-A (Package Name : RP8P) D 1 G 3 1. Gate 2 2. Source S 3. Drain Note: Mark

4.7. 2sk2593.pdf Size:30K _panasonic

2SK2598
2SK2598

Silicon Junction FETs (Small Signal) 2SK2593 2SK2593 Silicon N-Channel Junction Unit : mm For low-frequency amplification 1.6 0.15 For switching 0.4 0.8 0.1 0.4 Features 1 Low noise, high gain 3 High gate-drain voltage VGDO Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are available. Absolute Maximum Ratings (Tc = 25?C) 0.2 0.

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