2SK2698 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2698 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.35 (typ.) High forward transfer admittance : |Yfs| = 11 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10

2SK2699 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2699 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.5 (typ.) High forward transfer admittance : |Yfs| = 11 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 600 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS

FUJI POWER MOSFET2SK2690-01200511N-CHANNEL SILICON POWER MOSFETFAP-IIIB SeriesOutline Drawings [mm]TO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersEquivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratingsDrain(

2SK2691-01RFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsHigh speed switching TO-3PFLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C unless