2SK2698 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2698
   Código: K2698
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 58 nC
   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 880 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO3P

Búsqueda de reemplazo de MOSFET 2SK2698

2SK2698 Datasheet (PDF)

..1. Size:418K toshiba
2sk2698.pdf

2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2698 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.35 (typ.) High forward transfer admittance : |Yfs| = 11 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10

8.1. Size:419K toshiba
2sk2699.pdf

2SK2699 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2699 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.5 (typ.) High forward transfer admittance : |Yfs| = 11 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 600 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS

8.2. Size:226K fuji
2sk2690-01.pdf

FUJI POWER MOSFET2SK2690-01200511N-CHANNEL SILICON POWER MOSFETFAP-IIIB SeriesOutline Drawings [mm]TO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersEquivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratingsDrain(

8.3. Size:281K fuji
2sk2691-01r.pdf

2SK2691-01RFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsHigh speed switching TO-3PFLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C unless

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: