2SK2718 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2718
   Código: K2718
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 21 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6.4 Ohm
   Paquete / Cubierta: TO220NIS

Búsqueda de reemplazo de MOSFET 2SK2718

2SK2718 Datasheet (PDF)

..1. Size:411K toshiba
2sk2718.pdf

2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2718 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 5.6 (typ.) (ON) High forward transfer admittance : |Y | = 2.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1

8.1. Size:42K 1
2sk2710.pdf

2SK2710External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 600 V I = 100A, V = 0V(BR) DSS D GSV 600 VDSSI 100 nA V = 30VGSS GSV 30 VGSSI 100 A V = 600V, V = 0VDSS DS GSI 12 ADV 2.0 3.0 4.0 V V = 10V, I = 1mATH DS DI 48

8.2. Size:409K toshiba
2sk2717.pdf

2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2717 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 2.3 (typ.) (ON) High forward transfer admittance : |Y | = 4.4 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1

8.3. Size:325K toshiba
2sk2719.pdf

8.4. Size:144K rohm
2sk2714.pdf

TransistorsSwitching (500V, 10A)2SK2714FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications1

8.5. Size:137K rohm
2sk2714 1-5.pdf

8.6. Size:143K rohm
2sk2713.pdf

TransistorsSwitching (450V, 5A)2SK2713FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications13

8.7. Size:138K rohm
2sk2715.pdf

TransistorsSwitching (500V, 2A)2SK2715FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to use in parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specificati

8.8. Size:134K rohm
2sk2711 1-5.pdf

8.9. Size:137K rohm
2sk2713 1-5.pdf

8.10. Size:145K rohm
2sk2715tl.pdf

8.11. Size:139K rohm
2sk2711.pdf

TransistorsSwitching (250V, 16A)2SK2711FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to use in parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specificat

8.12. Size:133K rohm
2sk2715 1-5.pdf

8.13. Size:925K cn vbsemi
2sk2715.pdf

2SK2715www.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS di

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