2SK2744 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK2741 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2741 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.12 (typ.) DS (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS Enhancem

2SK2742 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2742 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.28 (typ.) DS (ON) High forward transfer admittance : |Y | = 3.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhance

2SK2745 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2745 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 7.0 m (typ.) DS (ON) High forward transfer admittance : |Y | = 50 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 50 V) DS Enhanceme

2SK2746 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2746 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.3 (typ.) (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1

2SK2749 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2749 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.6 (typ.) (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0

TransistorsSwitching (600V, 7A)2SK2740FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications15