2SK2745 Todos los transistores

 ..1. Size:399K  toshiba
 2sk2745.pdf

2SK2745 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2745 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 7.0 m (typ.) DS (ON) High forward transfer admittance Y = 50 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 50 V) DS Enhanceme

 8.1. Size:414K  toshiba
 2sk2741.pdf

2SK2741 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2741 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.12 (typ.) DS (ON) High forward transfer admittance Y = 5.0 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancem

 8.2. Size:418K  toshiba
 2sk2742.pdf

2SK2742 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2742 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.28 (typ.) DS (ON) High forward transfer admittance Y = 3.5 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhance

 8.3. Size:420K  toshiba
 2sk2746.pdf

2SK2746 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2746 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 1.3 (typ.) (ON) High forward transfer admittance Y = 5.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1

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 2sk2744.pdf

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 2sk2749.pdf

2SK2749 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2749 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 1.6 (typ.) (ON) High forward transfer admittance Y = 5.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0

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 2sk2740 1-5.pdf

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 2sk2740.pdf

Transistors Switching (600V, 7A) 2SK2740 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 15