2SK2837 Todos los transistores

2SK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2837 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 0.21 (typ.) (ON) High forward transfer admittance Y = 17 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DSS Enhancement-mode Vth = 2.0 4.0 V

FUJI POWER MOSFET 2SK2834-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=

2SK2835 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2835 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 0.56 (typ.) (ON) High forward transfer admittance Y = 4.5 S (typ.) fs Low leakage current I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode Vth = 1.5 3.5 V

2SK2839 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2839 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm 4 V gatedrive Low drain-source ON resistance R = 30 m (typ.) DS (ON) High forward transfer admittance Y = 11 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 30 V) DS Enhancement-mode

2SK2838 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2838 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.84 (typ.) High forward transfer admittance Y = 4.4 S (typ.) fs Low leakage current I = 100 A (max) (V = 400 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V

2SK2836 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2836 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 6.4 (typ.) (ON) High forward transfer admittance Y = 0.85 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DSS Enhancement-mode Vth = 2.0 4.0

isc N-Channel MOSFET Transistor 2SK2830 FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK2838B FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max)@V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK2834W FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK2832 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK2838K FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max)@V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK2833 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK2834N FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi