2SK2862 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2862
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.2 Ohm
Paquete / Cubierta: TO220NIS
Búsqueda de reemplazo de 2SK2862 MOSFET
2SK2862 Datasheet (PDF)
2sk2862.pdf

2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2862 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 2.9 (typ.) (ON) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 1
2sk2862.pdf

isc N-Channel MOSFET Transistor 2SK2862FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 3.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk2866.pdf

2SK2866 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2866 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.54 (typ.) (ON) High forward transfer admittance : |Y | = 9.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V
2sk2865.pdf

2SK2865 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2865 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : R = 4.2 (typ.) DS (ON) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 600 V) DS Enhancement-mode : V = 2.0~4.0 V (
Otros transistores... 2SK2837 , 2SK2838 , 2SK2839 , 2SK2841 , 2SK2842 , 2SK2843 , 2SK2844 , 2SK2846 , 5N60 , 2SK2866 , 2SK2882 , 2SK2883 , 2SK2884 , 2SK2886 , 2SK2889 , 2SK2914 , 2SK2915 .
History: AO6405 | LP2501DT1G | 2SK3666-3-TB-E | QM3003D | MPSA60M600 | PSMN2R0-40YLD
History: AO6405 | LP2501DT1G | 2SK3666-3-TB-E | QM3003D | MPSA60M600 | PSMN2R0-40YLD



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