2SK2862 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2862 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 2.9 (typ.) (ON) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 1

isc N-Channel MOSFET Transistor 2SK2862FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 3.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

2SK2866 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2866 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.54 (typ.) (ON) High forward transfer admittance : |Y | = 9.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V

2SK2865 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2865 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : R = 4.2 (typ.) DS (ON) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 600 V) DS Enhancement-mode : V = 2.0~4.0 V (

Ordering number : ENN66172SK2867N-Channel Silicon MOSFET2SK2867Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Ultrahigh-speed switching. unit : mm Low-voltage drive. 2091A[2SK2867]0.40.1630 to 0.11 0.95 0.95 21 : Gate1.92.92 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condition

Ordering number : ENN66102SK2864N-Channel Silicon MOSFET2SK2864Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2128 Enables simplified fabrication, high-density mounting,[2SK2864]and miniaturization in end products due to the surface8.2mountable package. 7.86.20.631 20.31.0 1.0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2869(L), 2SK2869(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1037-0200 (Previous: ADE-208-570) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 0.033 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package name: DPAK(L

SMD Type MOSFETN-Channel MOSFET2SK2869-ZJ Features VDS (V) = 60V ID = 20 A (VGS = 10V) RDS(ON) 45m (VGS = 10V) RDS(ON) 70m (VGS = 4V) High speed switchingDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage VGS 20 Continuous Drain Current ID 20 Pulsed Drain

isc N-Channel MOSFET Transistor 2SK2869LFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 45m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK2866FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK2869SFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 45m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid