2SK2866 Todos los transistores

 ..1. Size:412K  toshiba
 2sk2866.pdf

2SK2866 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2866 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 0.54 (typ.) (ON) High forward transfer admittance Y = 9.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V

 ..2. Size:288K  inchange semiconductor
 2sk2866.pdf

isc N-Channel MOSFET Transistor 2SK2866 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.1. Size:423K  toshiba
 2sk2865.pdf

2SK2865 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2865 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance R = 4.2 (typ.) DS (ON) High forward transfer admittance Y = 1.7 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 600 V) DS Enhancement-mode V = 2.0 4.0 V (

 8.2. Size:411K  toshiba
 2sk2862.pdf

2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2862 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 2.9 (typ.) (ON) High forward transfer admittance Y = 1.7 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 1

 8.3. Size:40K  sanyo
 2sk2867.pdf

Ordering number ENN6617 2SK2867 N-Channel Silicon MOSFET 2SK2867 Ultrahigh-Speed Switching Applications Features Package Dimensions Ultrahigh-speed switching. unit mm Low-voltage drive. 2091A [2SK2867] 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1 Gate 1.9 2.9 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condition

 8.4. Size:28K  sanyo
 2sk2864.pdf

Ordering number ENN6610 2SK2864 N-Channel Silicon MOSFET 2SK2864 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2128 Enables simplified fabrication, high-density mounting, [2SK2864] and miniaturization in end products due to the surface 8.2 mountable package. 7.8 6.2 0.6 3 1 2 0.3 1.0 1.0

 8.5. Size:109K  renesas
 rej03g1037 2sk2869lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:95K  renesas
 2sk2869.pdf

2SK2869(L), 2SK2869(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1037-0200 (Previous ADE-208-570) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 0.033 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK(L

 8.7. Size:1437K  kexin
 2sk2869-zj.pdf

SMD Type MOSFET N-Channel MOSFET 2SK2869-ZJ Features VDS (V) = 60V ID = 20 A (VGS = 10V) RDS(ON) 45m (VGS = 10V) RDS(ON) 70m (VGS = 4V) High speed switching D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 20 Pulsed Drain

 8.8. Size:355K  inchange semiconductor
 2sk2869l.pdf

isc N-Channel MOSFET Transistor 2SK2869L FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 45m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.9. Size:278K  inchange semiconductor
 2sk2862.pdf

isc N-Channel MOSFET Transistor 2SK2862 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 3.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.10. Size:287K  inchange semiconductor
 2sk2869s.pdf

isc N-Channel MOSFET Transistor 2SK2869S FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 45m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid