2SK2914 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK2914 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2914 Chopper Regulator, DC-DC Converter and Moter Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.42 (typ.) (ON) High forward transfer admittance : |Y | = 7.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V

isc N-Channel MOSFET Transistor 2SK2914FEATURESDrain Current : I = 7.5A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB

2SK2915 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2915 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.31 (typ.) (ON) High forward transfer admittance : |Y | = 15 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V

2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV) 2SK2916 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drainsource ON resistance : RDS = 0.35 (typ.) (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancementmode : Vth = 2.0~4.0 V

2SK2917 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2917 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drainsource ON resistance : RDS = 0.21 (typ.) (ON) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancementmode : Vth = 2.0~4.

Ordering number:ENN6313N-Channel Silicon MOSFET2SK2911Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2091A 2.5V drive.[2SK2911]0.40.1630 to 0.11 0.95 0.95 21.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol C

Ordering number:ENN6121N-Channel Silicon MOSFET2SK2919Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2128 On-chip high-speed diode (trr=100ns).[2SK2919]8.27.86.20.631 20.31.0 1.00.62.54 2.545.087.810.06.0 1 : Gate2 : Source3 : DrainSANYO : ZPSpecificationsAbs

Ordering number:ENN6153AN-Channel Silicon MOSFET2SK2910Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2091A 4V drive.[2SK2910]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol C

2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1038-0200 (Previous: ADE-208-495A) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 15 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc N-Channel MOSFET Transistor 2SK2915FEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

isc N-Channel MOSFET Transistor 2SK2916FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

isc N-Channel MOSFET Transistor 2SK2912LFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

isc N-Channel MOSFET Transistor 2SK2918-01FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

isc N-Channel MOSFET Transistor 2SK2912SFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2917FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER