2SK2985 Todos los transistores

 ..1. Size:424K  toshiba
 2sk2985.pdf

2SK2985 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2985 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 4.5 m (typ.) (ON) High forward transfer admittance Y = 70 S (typ.) fs Low leakage current I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode Vth = 1.3 2.5 V (V = 10

 8.1. Size:433K  toshiba
 2sk2986.pdf

2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2986 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 4.5 m (typ.) High forward transfer admittance Y = 80 S (typ.) fs Low leakage current I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode Vth = 1.3 2.5 V (V = 10

 8.2. Size:136K  toshiba
 2sk2989.pdf

2SK2989 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK2989 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 120 m (typ.) (ON) High forward transfer admittance Y = 2.6 S (typ.) fs Low leakage current I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode Vth = 0.8 2.0 V

 8.3. Size:426K  toshiba
 2sk2987.pdf

2SK2987 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2987 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications Low drain-source ON resistance RDS = 4.5 m (typ.) (ON) High forward transfer admittance Y = 80 S (typ.) fs Low leakage current I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode Vth = 1.3 2.5 V (V =

 8.4. Size:81K  renesas
 2sk2980.pdf

2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 (Previous ADE-208-571B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.2 typ. (VGS = 4 V, ID = 500 mA) 2.5 V gate drive devices. Small package (MPAK) Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) D 3 1 G 1. Source 2 2. Gate 3. Drain S

 8.5. Size:123K  hitachi
 2sk298 2sk299.pdf

 8.6. Size:277K  inchange semiconductor
 2sk298.pdf

isc N-Channel MOSFET Transistor 2SK298 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.75 (Max) @V =15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid