2SK3117 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3117 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3117 Chopper Regulator DC-DC Converter, and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.21 (typ.) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DSS Enhancement-mode : Vth = 2.0~4.0 V (

isc N-Channel MOSFET Transistor 2SK3117FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3112SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONORDERING INFORMATION The 2SK3112 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3112 TO-220ABand designed for high voltage applications such as DC/DC2SK3112-S TO-262converter, actuator d

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3113SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3113 is N-channel DMOS FET device thatPART NUMBER PACKAGEfeatures a low gate charge and excellent switching2SK3113 TO-251characteristic, and designed for high voltage applications2SK3113-Z TO-252such as switching power supply, AC adapter.F

Ordering number:ENN6098AN-Channel Silicon MOSFET2SK3119Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 2.5V drive.[2SK3119]4.51.51.60.40.53 2 10.41.53.0 1 : Gate2 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3111SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device thatPART NUMBER PACKAGEfeatures a low on-state resistance and excellent2SK3111 TO-220ABswitching characteristics, and designed for high voltage2SK3111-S TO-262applications such as DC/DC converter, actuator dr

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3116SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SK3116 is N-channel DMOS FET device that features aPART NUMBER PACKAGElow gate charge and excellent switching characteristics, and2SK3116 TO-220ABdesigned for high voltage applications such as switching power2SK3116-S TO-262supply, AC adapter.2SK3116-ZJ TO-

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3114SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEORDERING INFORMATIONDESCRIPTION The 2SK3114 is N-channel DMOS FET device that features aPART NUMBER PACKAGElow gate charge and excellent switching characteristics, and2SK3114 Isolated TO-220designed for high voltage applications such as switching powersupply, AC adapter.FEATURES

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3110SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features alow on-state resistance and excellent switching characteristics, PART NUMBER PACKAGEand designed for high voltage applications such as DC/DC2SK3110 Isolated TO-220converter, actuator driver.FEAT

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3115SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, anddesigned for high voltage applications such as switching power supply, AC adapter.ORDERING INFORMATIONFEATURES Low gate charge PART NUMBER PACKAGEQG = 2

SMD Type ICSMD Type MOSFETMOS Field Effect Transistor2SK3113FeaturesTO-252Unit: mmLow on-state resistance+0.15 +0.16.50-0.15 2.30-0.1RDS(on) =4.4 MAX. (VGS =10 V, ID =1.0 A)5.30+0.2 0.50+0.8-0.2 -0.7Low gate chargeQG = 9 nC TYP. (VDD =450 V, VGS =10 V, ID =2.0 A)0.127Gate voltage rating 30 V0.80+0.1 max-0.1Avalanche capability ratings+0.12.3 0.60-0.1 1G

SMD Type MOSFETMOS Field Effect Transistor2SK3112TO-263Unit: mmFeatures+0.24.57-0.2Gate voltage rating 30 V+0.11.27-0.1Low on-state resistanceRDS(on) = 110m MAX. (VGS =10 V, ID = 13A)Low input capacitance+0.10.1max1.27-0.1Ciss = 1600 pF TYP. (VDS =10V, VGS =0V)+0.1Avalanche capability rated 0.81-0.12.54Built-in gate protection diode1Gate+0.22.54-0

isc N-Channel MOSFET Transistor 2SK3111FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =180m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO

isc N-Channel MOSFET Transistor 2SK3116-ZJFEATURESDrain Current : I = 7.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3113FEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 4.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO

isc N-Channel MOSFET Transistor 2SK3113-ZFEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 4.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB

isc N-Channel MOSFET Transistor 2SK3116FEATURESDrain Current : I = 7.5A@ T =25D CDrain Source Voltage: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO

isc N-Channel MOSFET Transistor 2SK3114FEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSOL

isc N-Channel MOSFET Transistor 2SK3112FEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =110m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO

isc N-Channel MOSFET Transistor 2SK3112-SFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3111-SFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3111-ZJFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc N-Channel MOSFET Transistor 2SK3116-SFEATURESDrain Current : I = 7.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3112-ZJFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3115FEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSOL