2SK3389 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3389
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 1870 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Búsqueda de reemplazo de 2SK3389 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK3389 datasheet
2sk3389.pdf
2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3389 Switching Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 3.8 m (typ.) High forward transfer admittance Yfs = 70 S (typ.) Low leakage current IDSS = 100 A (VDS = 30 V) Enhancement mode Vth = 2.0 t
2sk3388.pdf
2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3388 Switching Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 82 m (typ.) High forward transfer admittance Yfs = 20 S (typ.) Low leakage current IDSS = 100 A (VDS = 250 V) Enhancement mode Vth = 1.5 t
2sk3387.pdf
2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2- -MOSV) 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 0.08 (typ.) High forward transfer admittance Yfs = 17 S (typ.) Low leakage current IDSS = 100 A (VDS = 150 V) Enhancement m
2sk3386-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... 2SK3309 , 2SK3312 , 2SK3313 , 2SK3316 , 2SK3342 , 2SK3374 , 2SK3387 , 2SK3388 , IRFZ48N , 2SK3397 , 2SK3398 , 2SK3399 , 2SK3403 , 2SK3407 , 2SK3417 , 2SK3437 , 2SK3439 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASB80R750E | ASB70R380E | ASB65R300E | ASB65R220E | ASB65R120EFD | ASB60R150E | ASA80R900E | ASA80R750E | ASA80R290E | ASA70R950E | ASA70R600E | ASA70R380E | ASA70R240E | ASA65R850E | ASA65R550E | ASA65R350E
Popular searches
d882 | irf740 datasheet | ksa992 | irfb4227 | irfb4110 | tip36c | bd139 transistor | irf840 datasheet
