2SK3437 Todos los transistores

 ..1. Size:221K  toshiba
 2sk3437.pdf

2SK3437 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3437 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.74 (typ.) High forward transfer admittance Yfs = 4.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 5.0 V (VDS =

 0.1. Size:356K  inchange semiconductor
 2sk3437b.pdf

isc N-Channel MOSFET Transistor 2SK3437B FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.2. Size:282K  inchange semiconductor
 2sk3437k.pdf

isc N-Channel MOSFET Transistor 2SK3437K FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.1. Size:184K  toshiba
 2sk3439.pdf

2SK3439 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3439 DC-DC Converter Applications Unit mm Relay Drive and Motor Drive Applications Low drain-source ON resistance RDS (ON) = 3.8 m (typ.) High forward transfer admittance Yfs = 70 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to

 8.2. Size:207K  toshiba
 2sk3438.pdf

2SK3438 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3438 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.74 (typ.) High forward transfer admittance Yfs = 4.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 5.0 V (VDS =

 8.3. Size:206K  renesas
 2sk3434-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:206K  renesas
 2sk3432-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:206K  renesas
 2sk3435-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:206K  renesas
 2sk3431-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:46K  nec
 2sk3435.pdf

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3435 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3435 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3435 TO-220AB 2SK3435-S TO-262 FEATURES 2SK3435-Z TO-220SMD Super low on-state resistance RDS(on)1 = 14 m

 8.8. Size:48K  nec
 2sk3430.pdf

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3430 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3430 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3430 TO-220AB 2SK3430-S TO-262 FEATURES 2SK3430-Z TO-220SMD Super low on-state resistance RDS(on)1 = 7.3 m

 8.9. Size:75K  nec
 2sk3433-s-z-zj.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3433 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3433 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3433 TO-220AB 2SK3433-S TO-262 FEATURES 2SK3433-ZJ TO-263 Super low on-state resistance 2SK3433-Z TO-220SMDNote RDS(on)1 = 26 m MAX.

 8.10. Size:994K  kexin
 2sk3434-zj.pdf

SMD Type MOSFET N-Channel MOSFET 2SK3434-ZJ Features VDS S = 60V ID = 48 A (VGS = 10V) RDS(ON) 20m (VGS = 10V) RDS(ON) 31m (VGS = 4V) Low Ciss Ciss = 2100 pF TYP. Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage

 8.11. Size:995K  kexin
 2sk3430-zj.pdf

SMD Type MOSFET N-Channel MOSFET 2SK3430-ZJ Features VDS S = 40V ID = 80 A (VGS = 10V) RDS(ON) 7.3m (VGS = 10V) RDS(ON) 15m (VGS = 4V) Low Ciss Ciss = 2800 pF TYP. Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage

 8.12. Size:357K  inchange semiconductor
 2sk3431-z.pdf

isc N-Channel MOSFET Transistor 2SK3431-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 5.6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.13. Size:357K  inchange semiconductor
 2sk3435-z.pdf

isc N-Channel MOSFET Transistor 2SK3435-Z FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.14. Size:289K  inchange semiconductor
 2sk3431.pdf

isc N-Channel MOSFET Transistor 2SK3431 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 5.6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.15. Size:283K  inchange semiconductor
 2sk3434-s.pdf

isc N-Channel MOSFET Transistor 2SK3434-S FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.16. Size:288K  inchange semiconductor
 2sk3433.pdf

isc N-Channel MOSFET Transistor 2SK3433 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.17. Size:282K  inchange semiconductor
 2sk3435-s.pdf

isc N-Channel MOSFET Transistor 2SK3435-S FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.18. Size:289K  inchange semiconductor
 2sk3434.pdf

isc N-Channel MOSFET Transistor 2SK3434 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.19. Size:282K  inchange semiconductor
 2sk3433-s.pdf

isc N-Channel MOSFET Transistor 2SK3433-S FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.20. Size:283K  inchange semiconductor
 2sk3431-s.pdf

isc N-Channel MOSFET Transistor 2SK3431-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 5.6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.21. Size:288K  inchange semiconductor
 2sk3435.pdf

isc N-Channel MOSFET Transistor 2SK3435 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.22. Size:222K  inchange semiconductor
 2sk3430-z.pdf

isc N-Channel MOSFET Transistor 2SK3430-Z FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.23. Size:357K  inchange semiconductor
 2sk3434-z.pdf

isc N-Channel MOSFET Transistor 2SK3434-Z FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.24. Size:356K  inchange semiconductor
 2sk3433-z.pdf

isc N-Channel MOSFET Transistor 2SK3433-Z FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.25. Size:282K  inchange semiconductor
 2sk3430-s.pdf

isc N-Channel MOSFET Transistor 2SK3430-S FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.26. Size:288K  inchange semiconductor
 2sk3430.pdf

isc N-Channel MOSFET Transistor 2SK3430 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi