2SK3443 Todos los transistores

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2SK3443 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3443

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 150 V

Corriente continua de drenaje (Id): 30 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.055 Ohm

Empaquetado / Estuche: TFP

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2SK3443 Datasheet (PDF)

1.1. 2sk3443.pdf Size:169K _toshiba

2SK3443
2SK3443

2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3443 Switching Regulator, DC-DC Converter and Unit: mm Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 50 m? (typ.) High forward transfer admittance: ?Yfs? = 9 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 150 V) Enhancementmode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 m

4.1. 2sk3441.pdf Size:189K _toshiba

2SK3443
2SK3443

2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3441 DC-DC Converter Applications Unit: mm Relay Drive and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.5 m? (typ.) High forward transfer admittance: |Yfs| = 80 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 1

4.2. 2sk3445.pdf Size:188K _toshiba

2SK3443
2SK3443

2SK3445 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3445 Switching Regulator, DC-DC Converter Applications Unit: mm Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 90 m? (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 250 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10

4.3. 2sk3440.pdf Size:187K _toshiba

2SK3443
2SK3443

2SK3440 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3440 Switching Regulator, DC-DC Converter Applications Unit: mm Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 6.5 m? (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10

4.4. 2sk3442.pdf Size:167K _toshiba

2SK3443
2SK3443

2SK3442 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3442 Switching Regulator, DC-DC Converter and Unit: mm Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 15 m? (typ.) High forward transfer admittance: ?Yfs? = 28 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 100 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 m

4.5. 2sk3449.pdf Size:28K _sanyo

2SK3443
2SK3443

Ordering number : ENN6672 2SK3449 N-Channel Silicon MOSFET 2SK3449 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2190 4V drive. [2SK3449] 8.0 4.0 3.3 1.0 1.0 3.0 1.6 0.8 0.8 0.75 0.7 1 : Source 1 2 3 2 : Drain 3 : Gate Specifications 2.4 4.8 SANYO : TO-126ML Absolute Maximum Ratings at Ta=25C Par

4.6. 2sk3448.pdf Size:27K _sanyo

2SK3443
2SK3443

Ordering number : ENN6785 2SK3448 N-Channel Silicon MOSFET 2SK3448 Ultrahigh-Speed Switching Use Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2087A 4V drive. [2SK3448] Meets radial taping. 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate 2.54 2.54 Specifications SANYO : NMP Absolute Maximum Ratings at Ta=25

4.7. 2sk3446.pdf Size:82K _renesas

2SK3443
2SK3443

2SK3446 Silicon N Channel Power MOS FET Power Switching REJ03G1100-0800 (Previous: ADE-208-1566F) Rev.8.00 Sep 07, 2005 Features Capable of 2.5 V gate drive Low drive current Low on-resistance RDS (on) = 1.5 ? typ. (at VGS = 4 V) Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92MOD) D 1. Source G 2. Drain 3. Gate 3 2 1 S Rev.8.00 Sep 07, 200

4.8. rej03g1100 2sk3446ds.pdf Size:95K _renesas

2SK3443
2SK3443

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.9. rej03g1101 2sk3447ds.pdf Size:93K _renesas

2SK3443
2SK3443

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.10. 2sk3447.pdf Size:80K _renesas

2SK3443
2SK3443

2SK3447 Silicon N Channel Power MOS FET Power Switching REJ03G1101-0700 (Previous: ADE-208-1567E) Rev.7.00 Sep 07, 2005 Features Capable of 4 V gate drive Low drive current Low on-resistance RDS (on) = 1.5 ? typ. (at VGS = 10 V) Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92MOD) D 1. Source G 2. Drain 3. Gate 3 2 1 S Rev.7.00 Sep 07, 2005

Otros transistores... 2SK3403 , 2SK3407 , 2SK3417 , 2SK3437 , 2SK3439 , 2SK3440 , 2SK3441 , 2SK3442 , 2SK4106 , 2SK3444 , 2SK3445 , 2SK3462 , 2SK3497 , 2SK3499 , 2SK3506 , 2SK3543 , 2SK3561 .

 


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