2SK3462 Todos los transistores

 ..1. Size:183K  toshiba
 2sk3462.pdf

2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSV) 2SK3462 Switching Regulator, DC/DC Converter and Unit mm Motor Drive Applications 4 V gate drive Low drain-source ON-resistance RDS (ON) = 1.2 (typ.) High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 100 A (VDS = 250 V) Enhancement mode V

 8.1. Size:255K  1
 2sk345 2sk346.pdf

 8.2. Size:187K  toshiba
 2sk3466.pdf

2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3466 Chopper Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs

 8.3. Size:229K  renesas
 2sk3467.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:104K  fuji
 2sk3468-01.pdf

2SK3468-01 FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles

 8.5. Size:108K  fuji
 2sk3469-01mr.pdf

2SK3469-01MR FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle

 8.6. Size:289K  inchange semiconductor
 2sk3468.pdf

isc N-Channel MOSFET Transistor 2SK3468 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.7. Size:289K  inchange semiconductor
 2sk346.pdf

isc N-Channel MOSFET Transistor 2SK346 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.8. Size:281K  inchange semiconductor
 2sk3469-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3469-01MR FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s