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BUK7535-55 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK7535-55
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SOT78
 

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BUK7535-55 Datasheet (PDF)

 ..1. Size:52K  philips
 buk7535-55 2.pdf pdf_icon

BUK7535-55

Philips Semiconductors Product specification TrenchMOS transistor BUK7535-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 34 Afeatures very low on-state

 0.1. Size:313K  philips
 buk7535-55a buk7635-55a.pdf pdf_icon

BUK7535-55

BUK7535-55A; BUK7635-55ATrenchMOS standard level FETRev. 01 10 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7535-55A in SOT78 (TO-220AB)BUK7635-55A in SOT404 (D 2-PAK).2. Features TrenchMOS te

 6.1. Size:337K  philips
 buk7535-100a buk7635-100a.pdf pdf_icon

BUK7535-55

BUK7535-100A;BUK7635-100ATrenchMOS standard level FETRev. 01 02 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7535-100A in SOT78 (TO-220AB)BUK7635-100A in SOT404 (D2-PAK).2. Features TrenchMOS

 7.1. Size:302K  philips
 buk7535 buk7635 55a-01.pdf pdf_icon

BUK7535-55

BUK7535-55A; BUK7635-55ATrenchMOS standard level FETRev. 01 10 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7535-55A in SOT78 (TO-220AB)BUK7635-55A in SOT404 (D 2-PAK).2. Features TrenchMOS te

MOSTRAR MÁS

Otros transistores... BUK7506-30 , BUK7508-55 , BUK7510-30 , BUK7514-30 , BUK7514-55 , BUK7518-55 , BUK7524-55 , BUK7528-55 , AO4407 , BUK7575-55 , BUK7606-30 , BUK7608-55 , BUK7610-30 , BUK7614-30 , BUK7618-30 , BUK7618-55 , BUK7620-55 .

History: FDY1002PZ | FDMC2514SDC | BL5N135-P | IXTP1N120P

 

 
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