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2SK3568 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3568

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 42 nC

Tiempo de elevación (tr): 22 nS

Conductancia de drenaje-sustrato (Cd): 180 pF

Resistencia drenaje-fuente RDS(on): 0.52 Ohm

Empaquetado / Estuche: TO220SIS

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2SK3568 Datasheet (PDF)

1.1. 2sk3568.pdf Size:245K _toshiba

2SK3568
2SK3568

2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

4.1. 2sk356.pdf Size:137K _toshiba

2SK3568
2SK3568



4.2. 2sk3566.pdf Size:214K _toshiba

2SK3568
2SK3568

2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3566 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol

 4.3. 2sk3562.pdf Size:232K _toshiba

2SK3568
2SK3568

2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3562 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (

4.4. 2sk3563.pdf Size:348K _toshiba

2SK3568
2SK3568

TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563 unit:mm Switching Regulator Applications 10±0.3 2.7±0.2 φ3.2±0.2 • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement-mode: Vth = 2

 4.5. 2sk3561.pdf Size:227K _toshiba

2SK3568
2SK3568

2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings

4.6. 2sk3567.pdf Size:223K _toshiba

2SK3568
2SK3568

2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3567 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.) • High forward transfer admittance: |Yfs| = 2.5S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

4.7. 2sk3565.pdf Size:341K _toshiba

2SK3568
2SK3568

TENTATIVE 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK3565 unit:mm Switching Regulator Applications 10±0.3 2.7±0.2 φ3.2±0.2 • Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement-mode: Vth = 2

4.8. 2sk3569.pdf Size:236K _toshiba

2SK3568
2SK3568

2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

4.9. 2sk3564.pdf Size:248K _toshiba

2SK3568
2SK3568

2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3564 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) • High forward transfer admittance: |Yfs| = 2.6 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

4.10. 2sk3560.pdf Size:76K _panasonic

2SK3568
2SK3568

Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit: mm 4.6±0.2 10.5±0.3 1.4±0.1 For PDP/For high-speed switching ■ Features • Low on-resistance, low Qg 1.4±0.1 • High avalanche resistance 2.5±0.2 0.8±0.1 2.54±0.3 0 to 0.3 ■ Absolute Maximum Ratings TC = 25°C (10.2) Parameter Symbol Rating Unit (8.9) Drain-source surrender voltage VDSS 230 V 1 2 3 Gat

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