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2SK3568 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3568

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 42 nC

Tiempo de elevación (tr): 22 nS

Conductancia de drenaje-sustrato (Cd): 180 pF

Resistencia drenaje-fuente RDS(on): 0.52 Ohm

Empaquetado / Estuche: TO220SIS

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2SK3568 Datasheet (PDF)

1.1. 2sk3568.pdf Size:245K _toshiba

2SK3568
2SK3568

2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.4? (typ.) • High forward transfer admittance: |Yfs| = 8.5S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 500 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Rat

1.2. 2sk3568.pdf Size:253K _inchange_semiconductor

2SK3568
2SK3568

isc N-Channel MOSFET Transistor 2SK3568 ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS <100 µA @VDS = 500 V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Regulator Applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V

 4.1. 2sk356.pdf Size:137K _update

2SK3568
2SK3568



4.2. 2sk3562.pdf Size:232K _toshiba

2SK3568
2SK3568

2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3562 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.9? (typ.) • High forward transfer admittance: |Yfs| = 5.0S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta

 4.3. 2sk3563.pdf Size:348K _toshiba

2SK3568
2SK3568

TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3563 unit:mm Switching Regulator Applications 10±0.3 2.7±0.2 ?3.2±0.2 • Low drain-source ON resistance: RDS (ON) = 1.35? (typ.) • High forward transfer admittance: |Yfs| = 3.5S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 500 V) • Enhancement-mode: Vth = 2.0~4.0 V (VD

4.4. 2sk3561.pdf Size:227K _toshiba

2SK3568
2SK3568

2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3561 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.75? (typ.) • High forward transfer admittance: |Yfs| = 6.5S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 500 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta

 4.5. 2sk3567.pdf Size:223K _toshiba

2SK3568
2SK3568

2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3567 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.7? (typ.) • High forward transfer admittance: |Yfs| = 2.5S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Rat

4.6. 2sk3565.pdf Size:341K _toshiba

2SK3568
2SK3568

TENTATIVE 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3565 unit:mm Switching Regulator Applications 10±0.3 2.7±0.2 ?3.2±0.2 • Low drain-source ON resistance: RDS (ON) = 2.0? (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 720 V) • Enhancement-mode: Vth = 2.0~4.0 V (VD

4.7. 2sk3566 100506.pdf Size:214K _toshiba

2SK3568
2SK3568

2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3566 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 5.6 ? (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute

4.8. 2sk3569.pdf Size:236K _toshiba

2SK3568
2SK3568

2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3569 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54? (typ.) • High forward transfer admittance: |Yfs| = 8.5S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ra

4.9. 2sk3564.pdf Size:248K _toshiba

2SK3568
2SK3568

2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3564 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 3.7? (typ.) • High forward transfer admittance: |Yfs| = 2.6 S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 720 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ra

4.10. 2sk3560.pdf Size:76K _panasonic

2SK3568
2SK3568

Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit: mm 4.60.2 10.50.3 1.40.1 For PDP/For high-speed switching Features Low on-resistance, low Qg 1.40.1 High avalanche resistance 2.50.2 0.80.1 2.540.3 0 to 0.3 Absolute Maximum Ratings TC = 25C (10.2) Parameter Symbol Rating Unit (8.9) Drain-source surrender voltage VDSS 230 V 1 2 3 Gate-source surrender

4.11. 2sk3566.pdf Size:225K _inchange_semiconductor

2SK3568
2SK3568

isc N-Channel MOSFET Transistor 2SK3566,I2SK3566 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤6.4Ω. ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER

4.12. 2sk3565.pdf Size:237K _inchange_semiconductor

2SK3568
2SK3568

iscN-Channel MOSFET Transistor 2SK3565,I2SK3565 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =2.0Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAME

4.13. 2sk3569.pdf Size:214K _inchange_semiconductor

2SK3568
2SK3568

isc N-Channel MOSFET Transistor 2SK3569 DESCRIPTION ·Drain Current I = 10A@ T =25℃ D C ·Drain Source Voltage- : V = 600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching Regulators ·DC-DC Converter, ·Motor Control ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V D

4.14. 2sk3564.pdf Size:236K _inchange_semiconductor

2SK3568
2SK3568

iscN-Channel MOSFET Transistor 2SK3564,I2SK3564 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3.7Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAM

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