2SK3568 Todos los transistores

 

2SK3568 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3568

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 42 nC

Tiempo de elevación (tr): 22 nS

Conductancia de drenaje-sustrato (Cd): 180 pF

Resistencia drenaje-fuente RDS(on): 0.52 Ohm

Empaquetado / Estuche: TO220SIS

Búsqueda de reemplazo de MOSFET 2SK3568

 

2SK3568 Datasheet (PDF)

1.1. 2sk3568.pdf Size:245K _toshiba

2SK3568
2SK3568

2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.4? (typ.) • High forward transfer admittance: |Yfs| = 8.5S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 500 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Rat

4.1. 2sk356.pdf Size:137K _update

2SK3568
2SK3568



4.2. 2sk3561.pdf Size:227K _toshiba

2SK3568
2SK3568

2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3561 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.75? (typ.) • High forward transfer admittance: |Yfs| = 6.5S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 500 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta

 4.3. 2sk3562.pdf Size:232K _toshiba

2SK3568
2SK3568

2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3562 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.9? (typ.) • High forward transfer admittance: |Yfs| = 5.0S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta

4.4. 2sk3563.pdf Size:348K _toshiba

2SK3568
2SK3568

TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3563 unit:mm Switching Regulator Applications 10±0.3 2.7±0.2 ?3.2±0.2 • Low drain-source ON resistance: RDS (ON) = 1.35? (typ.) • High forward transfer admittance: |Yfs| = 3.5S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 500 V) • Enhancement-mode: Vth = 2.0~4.0 V (VD

 4.5. 2sk3566 100506.pdf Size:214K _toshiba

2SK3568
2SK3568

2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3566 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 5.6 ? (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute

4.6. 2sk3565.pdf Size:341K _toshiba

2SK3568
2SK3568

TENTATIVE 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3565 unit:mm Switching Regulator Applications 10±0.3 2.7±0.2 ?3.2±0.2 • Low drain-source ON resistance: RDS (ON) = 2.0? (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 720 V) • Enhancement-mode: Vth = 2.0~4.0 V (VD

4.7. 2sk3564.pdf Size:248K _toshiba

2SK3568
2SK3568

2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3564 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 3.7? (typ.) • High forward transfer admittance: |Yfs| = 2.6 S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 720 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ra

4.8. 2sk3567.pdf Size:223K _toshiba

2SK3568
2SK3568

2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3567 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.7? (typ.) • High forward transfer admittance: |Yfs| = 2.5S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Rat

4.9. 2sk3569.pdf Size:236K _toshiba

2SK3568
2SK3568

2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3569 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54? (typ.) • High forward transfer admittance: |Yfs| = 8.5S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ra

4.10. 2sk3560.pdf Size:76K _panasonic

2SK3568
2SK3568

Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit: mm 4.60.2 10.50.3 1.40.1 For PDP/For high-speed switching Features Low on-resistance, low Qg 1.40.1 High avalanche resistance 2.50.2 0.80.1 2.540.3 0 to 0.3 Absolute Maximum Ratings TC = 25C (10.2) Parameter Symbol Rating Unit (8.9) Drain-source surrender voltage VDSS 230 V 1 2 3 Gate-source surrender

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


2SK3568
  2SK3568
  2SK3568
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: US6U37 | US6M2 | US6M11 | US6M1 | US6K4 | US6K2 | US6K1 | US6J11 | US5U38 | US5U35 | US5U30 | US5U3 | US5U29TR | US5U2 | US5U1 |

 

 

 
Back to Top