2SK3934 Todos los transistores

 

2SK3934 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3934

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 62 nC

Tiempo de elevación (tr): 70 nS

Conductancia de drenaje-sustrato (Cd): 270 pF

Resistencia drenaje-fuente RDS(on): 0.3 Ohm

Empaquetado / Estuche: TO220SIS

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2SK3934 Datasheet (PDF)

1.1. 2sk3934.pdf Size:288K _toshiba

2SK3934
2SK3934

2SK3934 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3934 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.23? (typ.) • High forward transfer admittance: |Yfs| = 8.2 S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 500 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

4.1. 2sk3935.pdf Size:313K _toshiba

2SK3934
2SK3934

2SK3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3935 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.18? (typ.) High forward transfer admittance : |Yfs| = 10 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 450 V) Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma

4.2. 2sk3936.pdf Size:180K _toshiba

2SK3934
2SK3934

2SK3936 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II ?-MOS VI) 2SK3936 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 60 nC (typ.) • Fast reverse recovery time: trr = 380 ns (typ.) • Low drain-source ON-resistance: RDS (ON) = 0.2 ? (typ.) • High forward transfer admittance: |Yfs| = 16.5 S (typ.) • Low leakage current: IDSS

 4.3. 2sk3933-01l-s-sj.pdf Size:162K _fuji

2SK3934
2SK3934

2SK3933-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings E

4.4. 2sk3930-01l-s-sj.pdf Size:173K _fuji

2SK3934
2SK3934

2SK3930-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (T

 4.5. 2sk3931.pdf Size:101K _fuji

2SK3934
2SK3934

2SK3931-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings Equivalent ci

4.6. 2sk3932.pdf Size:105K _fuji

2SK3934
2SK3934

2SK3932-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unl

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