2SK3947 Todos los transistores

 ..1. Size:182K  toshiba
 2sk3947.pdf

2SK3947 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3947 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.1 (typ.) High forward transfer admittance Yfs = 5.0S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

 ..2. Size:279K  inchange semiconductor
 2sk3947.pdf

isc N-Channel MOSFET Transistor 2SK3947 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.1. Size:188K  toshiba
 2sk3940.pdf

2SK3940 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3940 Switching Regulator, DC/DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON-resistance RDS (ON) = 5.6 m (typ.) High forward transfer admittance Yfs = 90 S (typ.) Low leakage current IDSS = 100 A (VDS = 75 V) Enhancement-mode Vth = 3.0 to

 8.2. Size:258K  renesas
 2sk3943-zp.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:286K  inchange semiconductor
 2sk3940.pdf

isc N-Channel MOSFET Transistor 2SK3940 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 7.0m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.4. Size:357K  inchange semiconductor
 2sk3943-zp.pdf

isc N-Channel MOSFET Transistor 2SK3943-ZP FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 3.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno