2SK3947 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3947 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3947 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

isc N-Channel MOSFET Transistor 2SK3947FEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

2SK3940 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3940 Switching Regulator, DC/DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON-resistance: RDS (ON) = 5.6 m (typ.) High forward transfer admittance: |Yfs| = 90 S (typ.) Low leakage current: IDSS = 100 A (VDS = 75 V) Enhancement-mode: Vth = 3.0 to

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc N-Channel MOSFET Transistor 2SK3940FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3943-ZPFEATURESDrain Current : I = 82A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno