2SK4111 Todos los transistores

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2SK4111 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK4111

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 45 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 22 nS

Conductancia de drenaje-sustrato (Cd): 180 pF

Resistencia drenaje-fuente RDS(on): 0.75 Ohm

Empaquetado / Estuche: TO220NIS

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2SK4111 Datasheet (PDF)

1.1. 2sk4111.pdf Size:240K _toshiba

2SK4111
2SK4111

2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4111 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

4.1. 2sk4118ls.pdf Size:52K _upd-mosfet

2SK4111
2SK4111

Ordering number : ENA0829 2SK4118LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4118LS Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee. Specifications

4.2. 2sk4112.pdf Size:210K _toshiba

2SK4111
2SK4111

2SK4112 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4112 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) • High forward transfer admittance: |Yfs| = 5.5S (typ.) • Low leakage current: IDSS = 100μA (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

 4.3. 2sk4115 100129.pdf Size:343K _toshiba

2SK4111
2SK4111

2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?- MOS?) 2SK4115 Switching Regulator Applications Unit: mm Ф3.2±0.2 15.9max. • Low drain-source ON-resistance: RDS (ON) = 1.6 ? (typ.) • High forward transfer admittance: ?Yfs? = 5.0 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10

4.4. 2sk4113.pdf Size:210K _toshiba

2SK4111
2SK4111

2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK4113 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

 4.5. 2sk4110.pdf Size:202K _toshiba

2SK4111
2SK4111

2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4110 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma

4.6. 2sk4114.pdf Size:162K _toshiba

2SK4111
2SK4111

2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK4114 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 4.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Abso

4.7. 2sk4117ls.pdf Size:270K _sanyo

2SK4111
2SK4111

Ordering number : ENA0791A 2SK4117LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4117LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute

4.8. 2sk4116ls.pdf Size:270K _sanyo

2SK4111
2SK4111

Ordering number : ENA0790A 2SK4116LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4116LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute

Otros transistores... 2SK4022 , 2SK4103 , 2SK4104 , 2SK4105 , 2SK4106 , 2SK4107 , 2SK4108 , 2SK4110 , CEP83A3 , 2SK4112 , 2SK4113 , 2SK4114 , TJ120F06J3 , TK07H90A , TK09H90A , TK100F04K3L , TK12D60U .

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