2SK4113 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK4113 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4111 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOS) 2SK4115 Switching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: Yfs = 5.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V

2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4110 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma

2SK4112 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4112 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK4114 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 4.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Abso

Ordering number : ENA0829 2SK4118LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4118LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

Ordering number : ENA0830 2SK4119LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4119LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

Ordering number : ENA0790A 2SK4116LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4116LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

Ordering number : ENA0791A 2SK4117LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4117LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

iscN-Channel MOSFET Transistor 2SK4115FEATURESLow drain-source on-resistance:RDS(ON) = 2.0 (MAX)Enhancement mode:Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc N-Channel MOSFET Transistor 2SK4118LSFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.34(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

isc N-Channel MOSFET Transistor 2SK4119LSFEATURESDrain Current : I = 21A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.26(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

isc N-Channel MOSFET Transistor 2SK4116LSFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.54(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

isc N-Channel MOSFET Transistor 2SK4117LSFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole