TK20A20D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK20A20D
   Código: K20A20D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 43 nC
   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.109 Ohm
   Paquete / Cubierta: TO220SIS

Búsqueda de reemplazo de MOSFET TK20A20D

TK20A20D Datasheet (PDF)

..1. Size:219K toshiba
tk20a20d.pdf

TK20A20DMOSFETs Silicon N-Channel MOS (-MOS)TK20A20DTK20A20DTK20A20DTK20A20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.07 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth =

..2. Size:253K inchange semiconductor
tk20a20d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK20A20DITK20A20DFEATURESLow drain-source on-resistance:RDS(ON) = 0.07 (typ.)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

8.1. Size:232K toshiba
tk20a25d.pdf

TK20A25DMOSFETs Silicon N-Channel MOS (-MOS)TK20A25DTK20A25DTK20A25DTK20A25D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 250 V)(3) Enhancement mode: Vth

8.2. Size:251K inchange semiconductor
tk20a25d.pdf

isc N-Channel MOSFET Transistor TK20A25DFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 100m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.1. Size:234K toshiba
tk20a60w5.pdf

TK20A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20A60W5TK20A60W5TK20A60W5TK20A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.15 (typ.) by used to Super Junction Str

9.2. Size:273K toshiba
tk20a60u.pdf

TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20A60U Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

9.3. Size:243K toshiba
tk20a60w.pdf

TK20A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20A60WTK20A60WTK20A60WTK20A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

9.4. Size:205K toshiba
tk20a60t.pdf

TK20A60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20A60T Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute M

9.5. Size:253K inchange semiconductor
tk20a60w5.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK20A60W5, ITK20A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.15 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regula

9.6. Size:253K inchange semiconductor
tk20a60u.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK20A60U, ITK20A60UFEATURESLow drain-source on-resistance: RDS(ON) = 0.165 (typ.)Low leakage current: IDSS = 100A (max) (VDS = 600 V)Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONS

9.7. Size:253K inchange semiconductor
tk20a60w.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK20A60W, ITK20A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.155 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulat

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