TK70J06K3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK70J06K3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29 nS
Cossⓘ - Capacitancia de salida: 800 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Encapsulados: TO3P
Búsqueda de reemplazo de TK70J06K3 MOSFET
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TK70J06K3 datasheet
tk70j06k3.pdf
TK70J06K3 MOSFETs Silicon N-channel MOS (U-MOS ) TK70J06K3 TK70J06K3 TK70J06K3 TK70J06K3 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 4.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS
tk70j04k3z.pdf
TK70J04K3Z MOSFETs Silicon N-channel MOS (U-MOS ) TK70J04K3Z TK70J04K3Z TK70J04K3Z TK70J04K3Z 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.2 m (typ.) (VGS = 10 V) (2) Low leakage current
tk70j04j3.pdf
TK70J04J3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TK70J04J3 Motor Drive Application Unit mm Low drain-source ON resistance RDS (ON) = 3.0 m (typ.) High forward transfer admittance Yfs = 120 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 40 V) Enhancement mode Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ra
tk70j20d.pdf
TK70J20D MOSFETs Silicon N-Channel MOS ( -MOS ) TK70J20D TK70J20D TK70J20D TK70J20D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.02 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 200 V) (3) Enhancement mode Vth =
Otros transistores... TK40E10N1 , TK50F15J1 , TK55D10J1 , TK60D08J1 , TK65A10N1 , TK65E10N1 , TK6B60D , TK70D06J1 , P60NF06 , TK75J04K3Z , TK80D08K3 , TK8B50D , TK9A20DA , TPC6001 , TPC6003 , TPC6004 , TPC6005 .
History: CRSS038N08N
History: CRSS038N08N
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