BUK7628-55 Todos los transistores

 

BUK7628-55 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK7628-55

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: SOT404

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BUK7628-55 datasheet

 ..1. Size:56K  philips
buk7628-55 2.pdf pdf_icon

BUK7628-55

Philips Semiconductors Product specification TrenchMOS transistor BUK7628-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 40 A trench technology the devi

 0.1. Size:96K  philips
buk7528-55a buk7628-55a.pdf pdf_icon

BUK7628-55

Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55A Standard level FET BUK7628-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 41 A Using trench tec

 6.1. Size:80K  philips
buk7528 buk7628-100a.pdf pdf_icon

BUK7628-55

Philips Semiconductors Product specification TrenchMOS transistor BUK7528-100A Standard level FET BUK7628-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V available in TO220AB and SOT404 . ID Drain current (DC) 47 A Using trench

 6.2. Size:722K  nxp
buk7628-100a.pdf pdf_icon

BUK7628-55

BUK7628-100A N-channel TrenchMOS standard level FET Rev. 2 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F

Otros transistores... BUK7606-30 , BUK7608-55 , BUK7610-30 , BUK7614-30 , BUK7618-30 , BUK7618-55 , BUK7620-55 , BUK7624-55 , IRFP250 , BUK7635-55 , BUK7675-55 , BUK78150-55 , BUK7830-30 , BUK7840-55 , BUK7880-55 , BUK9120-48TC , BUK9506-30 .

 

 

 


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