TPC8014 Todos los transistores

 

TPC8014 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPC8014

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: SOP8

 Búsqueda de reemplazo de TPC8014 MOSFET

- Selecciónⓘ de transistores por parámetros

 

TPC8014 datasheet

 ..1. Size:241K  toshiba
 tpc8014.pdf pdf_icon

TPC8014

TPC8014 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8014 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 11 m (typ.) High forward transfer admittance Yfs = 10 S (typ.) Low leakage curre

 8.1. Size:79K  toshiba
 tpc8016-h.pdf pdf_icon

TPC8014

TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 48 nc (typ.) Low drain-source ON resistance R = 3.7 m

 8.2. Size:283K  toshiba
 tpc8017-h.pdf pdf_icon

TPC8014

TPC8017-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPC8017-H High Speed and High Efficiency DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 25 nC (typ.) Low drain-source ON resistance RDS

 8.3. Size:175K  toshiba
 tpc8010-h.pdf pdf_icon

TPC8014

TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Q = 18 nC (typ.) g Low drain-source ON resistance RDS (ON) = 12 m (typ.) High fo

MOSTRAR MÁS

Otros transistores... TPC8001 , TPC8003 , TPC8004 , TPC8006-H , TPC8009-H , TPC8010-H , TPC8012-H , TPC8013-H , IRF840 , TPC8016-H , TPC8017-H , TPC8018-H , TPC8020-H , TPC8021-H , TPC8022-H , TPC8024-H , TPC8025 .

History: UPA1819GR | AP6P090H | TPC8017-H

 

 

 

 

↑ Back to Top
.