TPC8020-H Todos los transistores

 

TPC8020-H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPC8020-H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 525 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: SOP8

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TPC8020-H datasheet

 ..1. Size:454K  toshiba
 tpc8020-h.pdf pdf_icon

TPC8020-H

TPC8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8020-H High-Efficiency DC/DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 6.9 nC (typ.) Low drain-source ON- resistance RD

 8.1. Size:185K  toshiba
 tpc8026.pdf pdf_icon

TPC8020-H

TPC8026 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 5.1 m (typ.) High forward transfer admittance Yfs = 30 S (typ.) Low leakage curre

 8.2. Size:182K  toshiba
 tpc8027.pdf pdf_icon

TPC8020-H

TPC8027 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8027 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 2.1 m (typ.) High forward transfer admittance Yfs = 48 S (typ.) Low leakage curre

 8.3. Size:211K  toshiba
 tpc8021-h.pdf pdf_icon

TPC8020-H

TPC8021-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8021-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 3.6 nC (typ.) Low drain-source ON-resistance RDS

MOSTRAR MÁS

Otros transistores... TPC8009-H , TPC8010-H , TPC8012-H , TPC8013-H , TPC8014 , TPC8016-H , TPC8017-H , TPC8018-H , 50N06 , TPC8021-H , TPC8022-H , TPC8024-H , TPC8025 , TPC8026 , TPC8030 , TPC8031-H , TPC8032-H .

 

 

 

 

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