TPC8025 Todos los transistores

 

TPC8025 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPC8025
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 380 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: SOP8
 

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TPC8025 Datasheet (PDF)

 ..1. Size:219K  toshiba
 tpc8025.pdf pdf_icon

TPC8025

TPC8025 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8025 Lithium-Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 m (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage cur

 8.1. Size:185K  toshiba
 tpc8026.pdf pdf_icon

TPC8025

TPC8026 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage curre

 8.2. Size:454K  toshiba
 tpc8020-h.pdf pdf_icon

TPC8025

TPC8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8020-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.9 nC (typ.) Low drain-source ON- resistance: RD

 8.3. Size:182K  toshiba
 tpc8027.pdf pdf_icon

TPC8025

TPC8027 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8027 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 2.1 m (typ.) High forward transfer admittance: |Yfs| = 48 S (typ.) Low leakage curre

MOSTRAR MÁS

Otros transistores... TPC8014 , TPC8016-H , TPC8017-H , TPC8018-H , TPC8020-H , TPC8021-H , TPC8022-H , TPC8024-H , IRF1404 , TPC8026 , TPC8030 , TPC8031-H , TPC8032-H , TPC8033-H , TPC8034-H , TPC8035-H , TPC8036-H .

History: TPC8055-H | STP20NE06L | FKI07076 | IPP80N06S2-05 | DMN2004VK | IRF150SMD

 

 
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