TPC8025 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8025
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 380 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET TPC8025
TPC8025 Datasheet (PDF)
tpc8025.pdf
TPC8025 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8025 Lithium-Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 m (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage cur
tpc8026.pdf
TPC8026 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage curre
tpc8020-h.pdf
TPC8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8020-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.9 nC (typ.) Low drain-source ON- resistance: RD
tpc8027.pdf
TPC8027 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8027 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 2.1 m (typ.) High forward transfer admittance: |Yfs| = 48 S (typ.) Low leakage curre
tpc8021-h.pdf
TPC8021-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8021-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.6 nC (typ.) Low drain-source ON-resistance: RDS
tpc8024-h.pdf
TPC8024-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8024-H High-Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.9 nC (typ.) Low drain-source ON-resistance: R
tpc8022-h.pdf
TPC8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS III) TPC8022-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge : QSW = 3.5 nC (typ.) Low drain-so
tpc8029.pdf
TPC8029 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8029 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 2.9 m (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage curre
tpc8028.pdf
TPC8028 NMOS (U-MOS) TPC8028 : mm PC : RDS (ON) = 3.5m () : |Yfs| = 40 S (
tpc8028.pdf
TPC8028www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918