TPC8030 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8030
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.9 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 390 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de TPC8030 MOSFET
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TPC8030 datasheet
tpc8030.pdf
TPC8030 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8030 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 7.5 m (typ.) High forward transfer admittance Yfs = 26 S (typ.) Low leakage curren
tpc8033-h.pdf
TPC8033-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8033-H High Efficiency DC/DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge QSW = 9.6 nC (typ.) Low drain-source ON-resistance RDS (ON) = 4.0 m (
tpc8037-h.pdf
TPC8037-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8037-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 5.0 nC (typ.) Low drain-source ON-resistance RDS (ON) = 7.6 m
Otros transistores... TPC8017-H , TPC8018-H , TPC8020-H , TPC8021-H , TPC8022-H , TPC8024-H , TPC8025 , TPC8026 , IRFB4110 , TPC8031-H , TPC8032-H , TPC8033-H , TPC8034-H , TPC8035-H , TPC8036-H , TPC8037-H , TPC8038-H .
History: LSF80R680GT | LNH05R230 | AGM30P08AP | LSG60R1K4HT | LSF80R980GT
History: LSF80R680GT | LNH05R230 | AGM30P08AP | LSG60R1K4HT | LSF80R980GT
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
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